Results 121 to 130 of about 12,756,435 (265)
, 2001 Semiconductors -- December 2001 Volume 35, Issue 12, pp. 1347-1417 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Paramagnetic Defects in Silicon Carbide Crystals Irradiated with Gamma-Ray Quanta I. V. Ilyin, E. N. Mokhov, and P.
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Advanced Functional Materials, EarlyView.Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella +11 more
wiley +1 more source
Harmonic Enhancement of Terahertz GaN Planar Gunn Oscillators With Multiple Gates
IEEE Journal of the Electron Devices SocietyIn this paper, we propose a novel design of GaN-based planar Gunn oscillator as terahertz signal source. The oscillator has multiple gates and each gate can be individually biased.
Ying Wang +4 more
doaj +1 more source
, 2001 Semiconductors -- September 2001 Volume 35, Issue 9, pp. 981-1116 THIS ISSUE IS DEDICATED TO THE MEMORY OF ANATOLI VASIL'EVICH RZHANOV (1920–2000) A Scientist, a Mentor, a Soldier I. G. Neizvestnyi pp.
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Advanced Functional Materials, EarlyView.Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee +21 more
wiley +1 more source
, 2002 Semiconductors -- February 2002 Volume 36, Issue 2, pp. 121-238 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors B. V. Petukhov pp.
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Advanced Functional Materials, EarlyView.ABSTRACT Neat films of organic dyes are an interesting technological platform for solar cells and photodetectors. Recently, the conventional biphasic bulk‐heterojunction paradigm for photoinduced charge separation was challenged by the observation that charge carriers can be photogenerated in single‐component materials. A comprehensive experimental and
Davide Giavazzi +12 more
wiley +1 more source
Detecting defects that reduce breakdown voltage using machine learning and optical profilometry
Scientific ReportsSemiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high frequency power
James C. Gallagher +5 more
doaj +1 more source
, 2000 Semiconductors -- September 2000 Volume 34, Issue 9, pp. 983-1102 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Long-Range Effects of Ion Irradiation, Chemical Etching, and Mechanical Grinding on Relaxation of a Solid Solution ...
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Amphoteric Cu‐Doping Leading to High Thermoelectric Performance in p‐Type Bismuth Antimony Telluride
Advanced Functional Materials, EarlyView.This study shows that Cu plays two opposite roles in p‐type Bi0.5Sb1.5Te3 depending on the processing route. Under thermodynamic‐equilibrium bulk‐synthesis, Cu mainly occupies cation sites, increases hole concentration, preserves mobility, and slightly reduces lattice heat transport. The best‐performing composition among the investigated series reaches
Moritz Thiem +15 more
wiley +1 more source