Results 81 to 90 of about 12,756,435 (265)

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Semiconductors V. 36, I. 11

, 2002
Semiconductors -- November 2002 Volume 36, Issue 11, pp. 1199-1321 DEDICATED TO THE MEMORY OF V. F. MASTEROV Vadim Fedorovich Masterov, a Scientist and a Teacher V. K. Ivanov and B. P. Popov pp.

core  

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures

Nanotechnology Reviews, 2017
The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In
John Chelliah Cyril R.A., Swaminathan Rajesh   +1 more
doaj   +1 more source

Semiconductors V. 35, I. 06

, 2001
Semiconductors -- June 2001 Volume 35, Issue 6, pp. 613-734 II INTERNATIONAL CONFERENCE ON AMORPHOUS AND MICROCRYSTALLINE SEMICONDUCTORS II International Conference on Amorphous and Microcrystalline Semiconductors pp.

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Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source

Physics-informed Bayesian optimization suitable for extrapolation of materials growth

npj Computational Materials
This paper describes a novel physics-informed Bayesian optimization approach that leverages prior physics knowledge, specifically Vegard’s law and the linear relationship between gas flow rate and composition in compound semiconductors.
Wataru Kobayashi, Takuma Otsuka, Yuki K. Wakabayashi, Gensai Tei   +3 more
doaj   +1 more source

Semiconductors V. 39, I. 10

, 2005
Semiconductors -- October 2005 Volume 39, Issue 10, pp. 1111-1233 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Thermodynamic Stability of Bulk and Epitaxial CdHgTe, ZnHgTe, and MnHgTe Alloys V. G. Deibuk, S. G. Dremlyuzhenko,

core  

Pressure‐Assisted Dimensional Transformation of 2D Hydrogenated Borophene into 0D Boron Quantum Dots

Advanced Functional Materials, EarlyView.
Hydrogenated borophene (HB) is transformed into distinct boron nanostructures through a solvent‐free thermal process. Under flowing nitrogen, hydrogen escape promotes reconstruction into B2O3 nanoplatelets, whereas hydrogen‐induced pressure under sealed conditions facilitates fragmentation into boron quantum dots.
Ozden Gunes Yildiz, Ramin Yazdaanpanah, Yongfeng Guo, Pouriya Naziri, Sachin Kulkarni, Martina Mercurio, Maria Cristina Larciprete, Ilaria Fratoddi, Paul Simon, Wan‐Lu Li, Koray Aydin, Umut Aydemir   +11 more
wiley   +1 more source

High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution

Advanced Photonics Research
Gallium nitride (GaN)‐based semiconductor laser diodes (LDs) have garnered significant attention due to their promising applications. However, high‐power LDs face serious degradation issues that limit their practical use.
Enming Zhang, Yue Zeng, Wenyu Kang, Zhibai Zhong, Yushou Wang, Tongwei Yan, Shaohua Huang, Zhongying Zhang, Kechuang Lin, Junyong Kang   +9 more
doaj   +1 more source