Results 61 to 70 of about 13,433 (215)

Correlated Metal LaNiO3 as a p‐Type Transparent Conductor

open access: yesAdvanced Functional Materials, EarlyView.
p‐type transparent conducting oxides are needed to enable superstrate solar cell geometries with n‐type absorbers. The p‐type correlated metal LaNiO3 combines high optical transmission with low electrical resistivity and is compatible with a range of scalable deposition processes.
Shivang Beniwal   +8 more
wiley   +1 more source

Synergistic Solar Interfacial Evaporation and Photocatalysis Enabled by a Hierarchical Porous Hydrogel Reactor

open access: yesAdvanced Functional Materials, EarlyView.
A tree‐inspired hydrogel interfacial reactor couples solar evaporation with photocatalysis for simultaneous desalination and waste water treatment. The bilayer design achieves 2.14 kg·m−2·h−1 evaporation rate with 79% dye degradation under one sun, demonstrating that photothermal heating and evaporation induced pollutant enrichment create a self ...
Yan Zhao   +4 more
wiley   +1 more source

Programmable 2D Magnetic Clusterphenes With High Curie Temperature and Strong Magnetic Anisotropy via Cluster Assembly and Ligand Synergy

open access: yesAdvanced Functional Materials, EarlyView.
Programmable 2D magnetic clusterphenes are realized through a ligand‐mediated cluster‐assembly strategy. Direct linking of magnetic superatomic clusters enhances electron delocalization and symmetry breaking, enabling the concurrent strengthening of magnetic exchange interactions and spin–orbit coupling.
Junxiang Fu   +13 more
wiley   +1 more source

Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN

open access: yesMaterials Research Letters, 2017
III–V and other binary octet semiconductors often take two phase forms—wurtzite (wz) and zinc blende (zb) crystal structures—with distinct functional performance at room temperature. Here, taking AlN as a representative III–V compound, we investigate how
Zhen Li   +9 more
doaj   +1 more source

Patterning Techniques for Fabrication of Submicrometer Structures in Photoresist, III-V Semiconductors and PMMA

open access: yesCommunications, 2010
This paper presents experimental results in the field of planar periodic structures, their fabrication and analysis. We demonstrate techniques and experimental results of fabrication of two-dimensional periodic structures and their preparation in a thin ...
Dusan Pudis   +5 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

open access: yesNanoscale Research Letters, 2010
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration ...
Isella G   +7 more
doaj   +1 more source

A Material‐Agnostic Strategy for Uniform Patterning of Conjugated Polymers Unveils the True Role of Porosity in Organic Electrochemical Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang   +4 more
wiley   +1 more source

Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe)

open access: yesEPJ Web of Conferences, 2012
The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge), III-V (GaAs, GaP) and II-VI (ZnSe ...
Bouhafs B., Mahi N.
doaj   +1 more source

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

open access: yesAdvanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie   +16 more
wiley   +1 more source

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