Results 51 to 60 of about 12,756,435 (265)

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Single-photon sources with quantum dots in III–V nanowires

open access: yesNanophotonics, 2019
Single-photon sources are one of the key components in quantum photonics applications. These sources ideally emit a single photon at a time, are highly efficient, and could be integrated in photonic circuits for complex quantum system designs.
Mäntynen Henrik   +3 more
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

open access: yesAdvanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas   +6 more
wiley   +1 more source

Point defects in III-V compound semiconductors

open access: yes, 2000
Point defects in III-V compound semiconductors were analyzed systematically in this paper. The effects of substitutes, antisites, interstitials, and vacancies on lattice parameters in III-V compound semiconductors were calculated with a simple model. The
Chen N   +1 more
core  

Optical Signature of Moiré Superlattices Formed by Twisted SrTiO3 Membranes

open access: yesAdvanced Functional Materials, EarlyView.
We discover optical signatures from bonded interfaces in twisted SrTiO3 moiré superlattices, including low‐frequency Raman vibrational modes and strong second‐harmonic generation, consistent with strong interlayer coupling inferred from cross‐sectional electron microscopy and ab initio calculations. ABSTRACT Moiré superlattices formed at the interfaces
T. A. M. Ragib Shahriar   +13 more
wiley   +1 more source

Semiconductors V. 32, I. 11

open access: yes, 1998
Semiconductors -- November 1998 Volume 32, Issue 11, pp. 1141-1256 REVIEW Chalcogenide passivation of III–V semiconductor surfaces V. N. Bessolov and M. V. Lebedev Full Text: PDF (215 kB) ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF

core  

Fusogenic RNA Nanomodules for Fusion‐Mediated and Multiplexed siRNA Delivery

open access: yesAdvanced Functional Materials, EarlyView.
A fusogenic lipid‐layered RNA nanomodules (L‐CRAMs) enable high‐capacity and long‐lasting siRNA delivery through membrane fusion. These nanomodules carry exceptionally large siRNA payloads, avoid conventional endosomal uptake, and release multiple functional siRNAs through Dicer‐mediated processing.
Sunghyun Moon   +5 more
wiley   +1 more source

Advancements in NIR sensing for tuberculosis detection using dilute III-V semiconductors: current status and future prospects

open access: yesFrontiers in Sensors
This mini-review focuses on the use of dilute III-V semiconductors for near-infrared (NIR) sensing and the detection of tuberculosis (TB) in both humans and animals.
Melaku Dereje Mamo   +4 more
doaj   +1 more source

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

open access: yesIEEE Journal of the Electron Devices Society, 2018
Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated.
Kwang Hong Lee   +9 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

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