Results 21 to 30 of about 13,433 (215)

Light People: Professor Lan Fu

Light: Science & Applications, 2023
Editorial III-V semiconductors are compound semiconductor materials formed by combining group-III and group-V elements. With properties such as direct bandgap, high electron mobility, good homogeneity of large-size crystals and good lattice matching ...
Hui Wang, Cun Yu
doaj   +1 more source

Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

Nanoscale Research Letters, 2019
In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In0.15Al0.85As/GaAs0.85Sb0.15 strain-reducing layers (SRLs) by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy
A. Salhi, S. Alshaibani, Y. Alaskar, H. Albrithen, A. Albadri, A. Alyamani, M. Missous   +6 more
doaj   +1 more source

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

IEEE Journal of the Electron Devices Society, 2017
We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface.
Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, Xavier Wallart, Ludovic Desplanque   +6 more
doaj   +1 more source

On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)

New Journal of Physics, 2021
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non ...
Petr Steindl, Elisa Maddalena Sala, Benito Alén, Dieter Bimberg, Petr Klenovský   +4 more
doaj   +1 more source

Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering

Universitas Scientiarum, 2019
Currently, the obtention of nano-structures based on III-V materials is expensive. This calls for novel and inexpensive nanostructure manufacturing approaches.
S. Torres- Jaramillo, C. Pulzara-Mora, R. Bernal-Correa, M. Venegas de la Cerda, S. Gallardo-Hernández, M. López-López, A. Pulzara-Mora
doaj   +1 more source

Mechanochemical Synthesis and Characterization of Nanostructured ErB4 and NdB4 Rare‐Earth Tetraborides

Advanced Engineering Materials, Volume 27, Issue 6, March 2025.
ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur, Faruk Kaya, Bora Derin, Mustafa Lütfi Öveçoğlu, Ju Li, Duygu Ağaoğulları   +5 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

The Study of Transport Properties of (III−Mn) V Diluted Magnetic Semiconductors

Advances in Condensed Matter Physics, 2023
We investigated the transport properties of diluted magnetic semiconductors (DMSs) theoretically by using the Heisenberg and Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange interaction models by considering both spin and charge disorder.
Edosa Tasisa Jira, Habte Dulla Berry
doaj   +1 more source

Two-dimensional semiconductors based field-effect transistors: review of major milestones and challenges

Frontiers in Electronics, 2023
Two-dimensional (2-D) semiconductors are emerging as strong contenders for the future of Angstrom technology nodes. Their potential lies in enhanced device scaling and energy-efficient switching compared to traditional bulk semiconductors like Si, Ge ...
Keshari Nandan, Amit Agarwal, Somnath Bhowmick, Yogesh S. Chauhan   +3 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source