Results 61 to 70 of about 12,756,435 (265)
Semiconductors -- December 1999 Volume 33, Issue 12, pp. 1265-1330 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation V.
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Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee +10 more
wiley +1 more source
Semiconductors -- August 2005 Volume 39, Issue 8, pp. 861-988 REVIEW Power Bipolar Devices Based on Silicon Carbide P. A. Ivanov, M. E. Levinshtein, T. T. Mnatsakanov, J. W. Palmour, and A. K. Agarwal pp. 861-877 Full Text: PDF (199 kB)
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Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han +6 more
wiley +1 more source
Semiconductors -- July 2001 Volume 35, Issue 7, pp. 735-859 REVIEWS Doping of Semiconductors Using Radiation Defects Produced by Irradiation with Protons and Alpha Particles V. A. Kozlov and V. V. Kozlovski pp.
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Combinatorial vapor deposition enables independent tuning of Cs/Pb and Br/Cl in wide‐bandgap perovskites. Automated multimodal mapping of 500+ compositions reveals a high‐energy optical transition that correlates with enhanced photoluminescence, defining a practical Cs/Pb window.
Alexander Wieczorek +6 more
wiley +1 more source
Semiconductors -- July 2003 Volume 37, Issue 7, pp. 741-865 CONFERENCE. REVIEW III International Conference on Amorphous and Microcrystalline Semiconductors (July 2–4, 2002) E. I.
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A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
Semiconductors -- August 1998 Volume 32, Issue 8, pp. 799-916 In memory of Boris Timofeevich Kolomiets (on the 90th anniversary of his birth) Full Text: PDF (185 kB) Nanoscale mechanism of photoinduced metastability and reversible ...
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A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao +6 more
wiley +1 more source

