Results 71 to 80 of about 12,756,435 (265)

Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN

Materials Research Letters, 2017
III–V and other binary octet semiconductors often take two phase forms—wurtzite (wz) and zinc blende (zb) crystal structures—with distinct functional performance at room temperature. Here, taking AlN as a representative III–V compound, we investigate how
Zhen Li, Satyesh Yadav, Youxing Chen, Nan Li, Xiang-Yang Liu, Jian Wang, Shixiong Zhang, Jon Kevin Baldwin, Amit Misra, Nathan Mara   +9 more
doaj   +1 more source

Patterning Techniques for Fabrication of Submicrometer Structures in Photoresist, III-V Semiconductors and PMMA

Communications, 2010
This paper presents experimental results in the field of planar periodic structures, their fabrication and analysis. We demonstrate techniques and experimental results of fabrication of two-dimensional periodic structures and their preparation in a thin ...
Dusan Pudis, Jarmila Kubicova, Lubos Suslik, Jaroslava Skriniarova, Ivan Martincek, Ivan Novotny   +5 more
doaj   +1 more source

Semiconductors V. 33, I. 06

, 1999
Semiconductors -- June 1999 Volume 33, Issue 6, pp. 595-705 PUBLICATION OF THE SEMINAR PROCEEDINGS IS DEDICATED TO THE MEMORY OF V. F MASTEROV INTAS–RFBR Seminar on Rare-Earth Impurities in Semiconductors and Low-Dimensional Semiconductor ...

core  

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Semiconductors V. 35, I. 03

, 2001
Semiconductors -- March 2001 Volume 35, Issue 3, pp. 243-369 REVIEWS Electrical and Optical Properties of Pristine and Polymerized Fullerenes T. L. Makarova pp.

core  

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source

Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

Nanoscale Research Letters, 2010
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration ...
Isella G, Chrastina D, Fedorov A, Bietti S, Somaschini C, Sarti E, Koguchi N, Sanguinetti S   +7 more
doaj   +1 more source

Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe)

EPJ Web of Conferences, 2012
The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge), III-V (GaAs, GaP) and II-VI (ZnSe ...
Bouhafs B., Mahi N.
doaj   +1 more source

Passivation of III-V Semiconductor Surfaces

, 2013
Computer processor chips of the last generation are based on silicon, modified to achieve maximum charge mobility to enable fast switching speeds at low power.
Contreras, Yissel, Muscat, Anthony
core  

Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs [PDF]

, 2007
The performance of 300nm, 500nm and 1μm metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-κ (κ=20) dielectric stack grown upon a δ-doped AlGaAs/InGaAs/AlGaAs ...
Moran, D.A.J., D. A. J. Moran, H. Zhou, I. G. Thayne, M. Passlack, K. Rajagopalan, Passlack, M., X. Li, Li, X., Thayne, I.G., Droopad, R., McIntyre, D., Zhou, H., J. Abrokwah, D. McIntyre, Abrokwah, J., P. Zurcher, S. Thoms, R. Droopad, Zurcher, P., R. J. W. Hill, Thoms, S., Rajagopalan, K., Hill, R.J.W.   +23 more
core   +1 more source