Results 101 to 110 of about 13,483 (261)

Harmonic Enhancement of Terahertz GaN Planar Gunn Oscillators With Multiple Gates

IEEE Journal of the Electron Devices Society
In this paper, we propose a novel design of GaN-based planar Gunn oscillator as terahertz signal source. The oscillator has multiple gates and each gate can be individually biased.
Ying Wang, Shuai Hui, Yu-Xin Fu, Yuan-Zhu Xia, He Guan   +4 more
doaj   +1 more source

Reconstructing Quantum Dot Surfaces via Dual‐Functional Ligand Pairing Enables Efficient Shortwave Infrared Optoelectronics

Advanced Functional Materials, EarlyView.
This work presents a ligand‐pairing strategy that reconstructs lead sulfide quantum dot surfaces for efficient short‐wave infrared optoelectronics. A low‐reactivity thiourea precursor combined with hydrobromic acid enables monodisperse and fully passivated quantum dots.
Dongeon Kim, Minjung Yang, Yunjin Lee, Gaeun Cho, Min‐Jae Si, Jaewoo Jeong, Seoryeon Jeong, Sol‐Hee Kim, Taeho Han, Seungin Jee, Byeong‐Chan Kim, Woong Kim, Seungmin Lee, Jun Hong Noh, Han Seul Kim, Yujin Jung, Se‐Woong Baek   +16 more
wiley   +1 more source

Polymer Substrates for Flexible Sensors: Advances and Contributions to Smart Agriculture

Advanced Functional Materials, EarlyView.
This review comprehensively summarizes recent advances in polymer‐based flexible sensors for smart agriculture, focusing on polymer substrate design, interface engineering, and applications in soil, plant, animal, aquaculture, and post‐harvest monitoring.
Yihui Li, Zhangzheng Xiao, Zheng Yan, Adnan Raza Altaf, Qun Song, Dingding Yao, Afshan Sohail, Yixin Wang, Wenxiu Ma, Shanjun Li, Yaohui Chen, Peiwen Liu, Kai Zhang   +12 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory. [PDF]

Sci Rep, 2015
El-Atwani O, Norris SA, Ludwig K, Gonderman S, Allain JP.   +4 more
europepmc   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

n‐Type Semiconductor Hydrogels for Tunable Organic Electrochemical Transistors Operation and Evaporation‐Driven Synergistic Energy Harvesting and Thermal Management

Advanced Functional Materials, EarlyView.
This study develops a tunable n‐OSC hydrogel (PBFDO‐PAAc) platform with a tunable porous network and thermoelectric properties. It demonstrates the first report of n‐OSC hydrogels for evaporation‐driven hydrovoltaic‐thermoelectric electricity generation as well as chemically dedoping‐mediated OECT working mode reconfiguration. This work expands n‐OSCs’
Zhenli Zhou, Cong Huang, Haohong Jiang, Yuhao Jiang, Yaoyao Zhu, Boyuan Li, Yi Wang, Enna Ha, Ni Zhao, Shu‐Jen Wang   +9 more
wiley   +1 more source

Unusual Temperature‐Enhanced Bulk Photovoltaic Effect Beyond the Centrosymmetric Phase in CuCrP2S6 van der Waals Crystals

Advanced Functional Materials, EarlyView.
Contrary to conventional expectations, the bulk photovoltaic effect in CuCrP2S6 is enhanced rather than suppressed upon transitioning into the crystallographically centrosymmetric phase. Dynamic Cu‐ion disorder creates transient polar states, which substantially amplifies zero‐bias photocurrent (shift‐current) generation, establishing dynamic symmetry ...
Ryoga Murata, Takao Sasagawa
wiley   +1 more source