Results 101 to 110 of about 12,756,485 (311)
, 2004 Semiconductors -- March 2004 Volume 38, Issue 3, pp. 245-367 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Genesis of Nanoscale Defects and Damage in GaAs Subjected to Multipulse Quasi-Static Photostrains in Micrometer-Sized ...
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Advanced Functional Materials, EarlyView.Advanced ink systems for solution‐processed textile triboelectric nanogenerators are systematically summarized, spanning conductive, tribo‐negative, and tribo‐positive layers. By connecting ink chemistry, deposition methods, and device function, the present review reveals the key governing principles of solution development and highlights practical ...
Xinlong Sun, Stephen Beeby
wiley +1 more source
, 1999 Semiconductors -- September 1999 Volume 33, Issue 9, pp. 933-1047 Eightieth anniversary of the Ioffe Institute B. B. D'yakov Full Text: PDF (396 kB) Silicon-germanium—a promise into the future? H. G. Grimmeiss Full Text: PDF (117 kB)
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Advanced Functional Materials, EarlyView.Autonomous scanning probe microscopy and multi‐objective Bayesian optimization navigate a ternary (Al,Sc,B)N combinatorial library. Registered photoluminescence, electron‐probe compositional mapping, and X‐ray diffraction connect local electromechanical function to defect‐sensitive emission, composition, and crystal structure.
Yu Liu +12 more
wiley +1 more source
, 1999 Semiconductors -- October 1999 Volume 33, Issue 10, pp. 1049-1155 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment I. V.
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Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors
Advanced Functional Materials, EarlyView.An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang +7 more
wiley +1 more source
, 1998 Semiconductors -- December 1998 Volume 32, Issue 12, pp. 1257-1330 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Kinetics of the accumulation of radiation defects during the high-dose electron irradiation of Pb1 – xSnxSe ...
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Advanced Functional Materials, EarlyView.Rapid microwave plasma torch engineering tunes crystal phases, carbon graphitization and oxygen‐vacancy defects in HfO2/C@C core‐shell fibrous membranes. Synergistic multi‐loss effects optimize impedance matching to deliver −65.75 dB reflection loss and a 7.37 GHz effective bandwidth for flexible electromagnetic wave absorption.
Qichao Ding +14 more
wiley +1 more source
, 2004 Semiconductors -- October 2004 Volume 38, Issue 10, pp. 1115-1239 REVIEW Photosensitive Polymer Semiconductors E. L. Aleksandrova pp. 1115-1159 Full Text: PDF (557 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS ...
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Advanced Functional Materials, EarlyView.OEG‐functionalized Y6‐derived acceptors induce thermally driven vertical phase separation, enabling pseudo‐planar heterojunction organic photodetectors. The resulting PM6:YTEG‐4F and PM6:YTEG‐4Cl organic photodetectors suppress dark current density by approximately 260‐fold and 210‐fold, respectively, while maintaining efficient photoresponse ...
Se Jeong Park +11 more
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