Results 91 to 100 of about 12,756,485 (311)

Semiconductors V. 35, I. 06

open access: yes, 2001
Semiconductors -- June 2001 Volume 35, Issue 6, pp. 613-734 II INTERNATIONAL CONFERENCE ON AMORPHOUS AND MICROCRYSTALLINE SEMICONDUCTORS II International Conference on Amorphous and Microcrystalline Semiconductors pp.

core  

Physics-informed Bayesian optimization suitable for extrapolation of materials growth

open access: yesnpj Computational Materials
This paper describes a novel physics-informed Bayesian optimization approach that leverages prior physics knowledge, specifically Vegard’s law and the linear relationship between gas flow rate and composition in compound semiconductors.
Wataru Kobayashi   +3 more
doaj   +1 more source

III-V Semiconductors and Microelectronics

open access: yesRevue de Physique Appliquée, 1987
No abstract ...
Adde, Robert, Charpentier, Jean-Claude
openaire   +1 more source

Pressure‐Assisted Dimensional Transformation of 2D Hydrogenated Borophene into 0D Boron Quantum Dots

open access: yesAdvanced Functional Materials, EarlyView.
Hydrogenated borophene (HB) is transformed into distinct boron nanostructures through a solvent‐free thermal process. Under flowing nitrogen, hydrogen escape promotes reconstruction into B2O3 nanoplatelets, whereas hydrogen‐induced pressure under sealed conditions facilitates fragmentation into boron quantum dots.
Ozden Gunes Yildiz   +11 more
wiley   +1 more source

Semiconductors V. 39, I. 10

open access: yes, 2005
Semiconductors -- October 2005 Volume 39, Issue 10, pp. 1111-1233 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Thermodynamic Stability of Bulk and Epitaxial CdHgTe, ZnHgTe, and MnHgTe Alloys V. G. Deibuk, S. G. Dremlyuzhenko,

core  

High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution

open access: yesAdvanced Photonics Research
Gallium nitride (GaN)‐based semiconductor laser diodes (LDs) have garnered significant attention due to their promising applications. However, high‐power LDs face serious degradation issues that limit their practical use.
Enming Zhang   +9 more
doaj   +1 more source

III - V Compound Semiconductors [PDF]

open access: yesNature, 1965
Physics of III-V Compounds (Wiley Series on the Science and Technology of Materials.) By Prof. O. Madelung translated by Dr. D. Meyerhofer. Pp. xiv + 409. (London, New York and Sydney: John Wiley and Sons, Inc., 1964.) 98s.
openaire   +1 more source

Anisotropic Phonon Dynamics and Directional Transport in Actinide Van der Waals Semiconductor Uranium Triselenide

open access: yesAdvanced Functional Materials, EarlyView.
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll   +17 more
wiley   +1 more source

Semiconductors V. 33, I. 07

open access: yes, 1999
Semiconductors -- July 1999 Volume 33, Issue 7, pp. 707-819 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Influence of native defects on polytypism in SiC A. A.

core  

Physics‐Grounded Materials Artificial Intelligence for Reliable Materials Discovery

open access: yesAdvanced Functional Materials, EarlyView.
Physics‐Grounded Materials AI (PhysMat AI) integrates physical priors, descriptors, constraints, verification, and data infrastructure into a unified full‐stack framework, enabling reliable, interpretable, and autonomous AI‐driven materials discovery.
Yuhang Wang   +3 more
wiley   +1 more source

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