Results 71 to 80 of about 12,756,485 (311)

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Semiconductors V. 37, I. 07

, 2003
Semiconductors -- July 2003 Volume 37, Issue 7, pp. 741-865 CONFERENCE. REVIEW III International Conference on Amorphous and Microcrystalline Semiconductors (July 2–4, 2002) E. I.

core  

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Semiconductors V. 32, I. 08

, 1998
Semiconductors -- August 1998 Volume 32, Issue 8, pp. 799-916 In memory of Boris Timofeevich Kolomiets (on the 90th anniversary of his birth) Full Text: PDF (185 kB) Nanoscale mechanism of photoinduced metastability and reversible ...

core  

Mechanically controlling the reversible phase transformation from zinc blende to wurtzite in AlN

Materials Research Letters, 2017
III–V and other binary octet semiconductors often take two phase forms—wurtzite (wz) and zinc blende (zb) crystal structures—with distinct functional performance at room temperature. Here, taking AlN as a representative III–V compound, we investigate how
Zhen Li, Satyesh Yadav, Youxing Chen, Nan Li, Xiang-Yang Liu, Jian Wang, Shixiong Zhang, Jon Kevin Baldwin, Amit Misra, Nathan Mara   +9 more
doaj   +1 more source

Patterning Techniques for Fabrication of Submicrometer Structures in Photoresist, III-V Semiconductors and PMMA

Communications, 2010
This paper presents experimental results in the field of planar periodic structures, their fabrication and analysis. We demonstrate techniques and experimental results of fabrication of two-dimensional periodic structures and their preparation in a thin ...
Dusan Pudis, Jarmila Kubicova, Lubos Suslik, Jaroslava Skriniarova, Ivan Martincek, Ivan Novotny   +5 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Semiconductors V. 33, I. 06

, 1999
Semiconductors -- June 1999 Volume 33, Issue 6, pp. 595-705 PUBLICATION OF THE SEMINAR PROCEEDINGS IS DEDICATED TO THE MEMORY OF V. F MASTEROV INTAS–RFBR Seminar on Rare-Earth Impurities in Semiconductors and Low-Dimensional Semiconductor ...

core  

III-V Compound Semiconductor Nanowires

, 2009
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group.
Paiman, S, Joyce, H, Kang, J, Gao, Q, Tan, H, Kim, Y, Zhang, X, Zou, J, Jagadish, C   +8 more
openaire   +2 more sources

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source