Results 61 to 70 of about 12,756,485 (311)

Semiconductors V. 32, I. 11

, 1998
Semiconductors -- November 1998 Volume 32, Issue 11, pp. 1141-1256 REVIEW Chalcogenide passivation of III–V semiconductor surfaces V. N. Bessolov and M. V. Lebedev Full Text: PDF (215 kB) ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF

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Advancements in NIR sensing for tuberculosis detection using dilute III-V semiconductors: current status and future prospects

Frontiers in Sensors
This mini-review focuses on the use of dilute III-V semiconductors for near-infrared (NIR) sensing and the detection of tuberculosis (TB) in both humans and animals.
Melaku Dereje Mamo, Yaschelewal Zigyalew, Seid Emamu Gelan, Bulelwa Ntsendwana, Lucky Sikhwivhilu   +4 more
doaj   +1 more source

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

IEEE Journal of the Electron Devices Society, 2018
Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated.
Kwang Hong Lee, Yue Wang, Bing Wang, Li Zhang, Wardhana Aji Sasangka, Shuh Chin Goh, Shuyu Bao, Kenneth E. Lee, Eugene A. Fitzgerald, Chuan Seng Tan   +9 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Semiconductors V. 33, I. 12

, 1999
Semiconductors -- December 1999 Volume 33, Issue 12, pp. 1265-1330 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation V.

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Bio‐Derived Polyelectrolyte Additive–Induced Interfacial Ion‐Diffusion Barriers for Nonvolatile Organic Artificial Synapses

Advanced Functional Materials, EarlyView.
Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han, Donghwa Lee, Hyeonse Kim, Hyoik Jang, Sein Chung, Geun Yeol Bae, Eunho Lee   +6 more
wiley   +1 more source

Semiconductors V. 39, I. 08

, 2005
Semiconductors -- August 2005 Volume 39, Issue 8, pp. 861-988 REVIEW Power Bipolar Devices Based on Silicon Carbide P. A. Ivanov, M. E. Levinshtein, T. T. Mnatsakanov, J. W. Palmour, and A. K. Agarwal pp. 861-877 Full Text: PDF (199 kB)

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Tuning the Optoelectronic Properties of Wide Bandgap Perovskites: Data‐Driven Insights from Combinatorial Synthesis and High‐Throughput Experimentation

Advanced Functional Materials, EarlyView.
Combinatorial vapor deposition enables independent tuning of Cs/Pb and Br/Cl in wide‐bandgap perovskites. Automated multimodal mapping of 500+ compositions reveals a high‐energy optical transition that correlates with enhanced photoluminescence, defining a practical Cs/Pb window.
Alexander Wieczorek, Sergey Tsarev, Nathan Rodkey, Oleksandr Pshyk, Stefanie Frick, Maksym V. Kovalenko, Sebastian Siol   +6 more
wiley   +1 more source

Semiconductors V. 35, I. 07

, 2001
Semiconductors -- July 2001 Volume 35, Issue 7, pp. 735-859 REVIEWS Doping of Semiconductors Using Radiation Defects Produced by Irradiation with Protons and Alpha Particles V. A. Kozlov and V. V. Kozlovski pp.

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