Results 81 to 90 of about 12,756,485 (311)

Semiconductors V. 35, I. 03

, 2001
Semiconductors -- March 2001 Volume 35, Issue 3, pp. 243-369 REVIEWS Electrical and Optical Properties of Pristine and Polymerized Fullerenes T. L. Makarova pp.

core  

Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

Nanoscale Research Letters, 2010
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration ...
Isella G, Chrastina D, Fedorov A, Bietti S, Somaschini C, Sarti E, Koguchi N, Sanguinetti S   +7 more
doaj   +1 more source

Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe)

EPJ Web of Conferences, 2012
The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge), III-V (GaAs, GaP) and II-VI (ZnSe ...
Bouhafs B., Mahi N.
doaj   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Passivation of III-V Semiconductor Surfaces

, 2013
Computer processor chips of the last generation are based on silicon, modified to achieve maximum charge mobility to enable fast switching speeds at low power.
Contreras, Yissel, Muscat, Anthony
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Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs [PDF]

, 2007
The performance of 300nm, 500nm and 1μm metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-κ (κ=20) dielectric stack grown upon a δ-doped AlGaAs/InGaAs/AlGaAs ...
Moran, D.A.J., D. A. J. Moran, H. Zhou, I. G. Thayne, M. Passlack, K. Rajagopalan, Passlack, M., X. Li, Li, X., Thayne, I.G., Droopad, R., McIntyre, D., Zhou, H., J. Abrokwah, D. McIntyre, Abrokwah, J., P. Zurcher, S. Thoms, R. Droopad, Zurcher, P., R. J. W. Hill, Thoms, S., Rajagopalan, K., Hill, R.J.W.   +23 more
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Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Semiconductors V. 36, I. 11

, 2002
Semiconductors -- November 2002 Volume 36, Issue 11, pp. 1199-1321 DEDICATED TO THE MEMORY OF V. F. MASTEROV Vadim Fedorovich Masterov, a Scientist and a Teacher V. K. Ivanov and B. P. Popov pp.

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Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures

Nanotechnology Reviews, 2017
The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In
John Chelliah Cyril R.A., Swaminathan Rajesh   +1 more
doaj   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source