Results 121 to 130 of about 12,756,485 (311)

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source

Semiconductors V. 37, I. 11

, 2003
Semiconductors -- November 2003 Volume 37, Issue 11, pp. 1243-1362 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites N. I. Medvedeva, E. I.

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Review of plasma etching processes for III-V semiconductorsMendeley Data

Micro and Nano Engineering
This paper provides a comprehensive literature review and analysis of III-V semiconductor plasma etching, highlighting key etching considerations and providing literature references to inform future process development. Plasma etching processes for III-V
Alison Clarke, Maxime Darnon, Karin Hinzer, Mathieu de Lafontaine   +3 more
doaj   +1 more source

Blue Upconversion Organic Light‐Emitting Diodes Achieving 1000 cd m−2 With an Operating Voltage of 2.7 V by Suppressing Interfacial Exciton Quenching

Advanced Functional Materials, EarlyView.
A triplet‐blocking layer controls triplet exciton dynamics in blue upconversion OLEDs. The layer keeps charge transfer (CT)‐generated triplet excitons inside the triplet‐triplet annihilation (TTA) host, suppresses anode‐side interfacial quenching, and increases the steady‐state triplet population.
Qing‐Jun Shui, Hiroto Iwasaki, Kosuke Anraku, Ken Albrecht, Yutaka Majima, Seiichiro Izawa   +5 more
wiley   +1 more source

Semiconductors V. 34, I. 04

, 2000
Semiconductors -- April 2000 Volume 34, Issue 4, pp. 371-494 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Thermodynamics of Complex Formation and Defect Clustering in Semiconductors S. V. Bulyarskii, V. V. Svetukhin, and P. E.

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Harmonic Enhancement of Terahertz GaN Planar Gunn Oscillators With Multiple Gates

IEEE Journal of the Electron Devices Society
In this paper, we propose a novel design of GaN-based planar Gunn oscillator as terahertz signal source. The oscillator has multiple gates and each gate can be individually biased.
Ying Wang, Shuai Hui, Yu-Xin Fu, Yuan-Zhu Xia, He Guan   +4 more
doaj   +1 more source

Charge‐Polarized Ni─S4 Single‐Atom Sites Drive Selective Photoreforming of Poly(lactic acid) to Lactate and Hydrogen

Advanced Functional Materials, EarlyView.
Atomically dispersed Ni–S4 sites on CdS nanorods induce interfacial charge polarization, directing photogenerated electrons to H2 evolution and holes to selective ester‐bond cleavage of poly(lactic acid). Without sacrificial reagents, this charge‐coupled system produces lactate while suppressing overoxidation, achieving an H2 evolution rate of 41.74 ...
Yu Yao, Panpan Zhang, Jinqiang Zhang, Xi‐lin Wu, Tara Pukala, Yifei Wang, Bernt Johannessen, Shaobin Wang, Xiaoguang Duan   +8 more
wiley   +1 more source

Semiconductors V. 36, I. 07

, 2002
Semiconductors -- July 2002 Volume 36, Issue 7, pp. 717-836 REVIEWS Wannier–Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes V. I. Sankin pp.

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Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella, Andrea Sessa, Yi‐Chen Tsai, Xuzhao Liu, Abdul Mannan, George Greaves, Yahya Saboon, Ben Spencer, Antonio Di Bartolomeo, Cinzia Casiraghi, Jessica Boland, Alessandro Grillo   +11 more
wiley   +1 more source

Semiconductors V. 35, I. 12

, 2001
Semiconductors -- December 2001 Volume 35, Issue 12, pp. 1347-1417 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Paramagnetic Defects in Silicon Carbide Crystals Irradiated with Gamma-Ray Quanta I. V. Ilyin, E. N. Mokhov, and P.

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