Results 11 to 20 of about 13,483 (261)
Empirical tight-binding parameters for wurtzite group III–V(non-nitride) and IV materials
AIP Advances, 2023 Suitable tight-binding models for wurtzite III–V (non-nitride) and group-V materials are presently missing in the literature. Many commonly used nearest neighbor tight-binding models for cubic-zincblende semiconductors result in highly inaccurate band ...
Joseph Sink, Craig Pryor
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Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties [PDF]
Научно-технический вестник информационных технологий, механики и оптики, 2021 Recently, III-V semiconductor nanostructures of reduced dimension attract more and more interest of researchers for the new generation devices creation.
Rodion R. Reznik +5 more
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III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy
Crystals, 2018 Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to ...
John Simon +5 more
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Optimizing DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN HEMT for GHZ application [PDF]
Serbian Journal of Electrical EngineeringThis paper presents a design and in-depth analysis of DC and RF characteristics of Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave application.
Ahmad Neda, Rewari Sonam, Nath Vandana
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gm/Id$g_m/I_d$ Analysis of vertical nanowire III–V TFETs
Electronics Letters, 2023 Experimental data on analog performance of gate‐all‐around III‐V vertical Tunnel Field‐Effect Transistors (TFETs) and circuits are presented. The individual device shows a minimal subthreshold swing of 44 mV/dec and transconductance efficiency of 50 V−1 ...
Gautham Rangasamy +3 more
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Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars
Advanced Materials Interfaces, 2022 The size‐dependent strain relaxation in InAs quantum dots on the top face of GaAs(111)A nanopillars is studied experimentally by scanning transmission electron microscopy (STEM) and theoretically using molecular static simulations.
Thomas Riedl +5 more
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Hyomen Kagaku, 1986 A review is presented on quantitative analysis of impurities in III-V compounds semiconductors, especially GaAs, by secondary ion mass spectrometry (SIMS).The accuracy of SIMS analysis was investigated in comparison with chemical analysis results in the round robin study which was supported by Japan Society for the Promotion of Science Commitee 145 ...
KUROSAWA, Satoru, HOMMA, Yosikazu
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IEEE Journal of the Electron Devices Society, 2016 After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of diminishing returns. The use of new semiconductor channel materials with improved transport properties over Si offer the potential for device scaling to nanometer ...
Jesus A. Del Alamo +5 more
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Theoretical Models of Ferromagnetic III‐V Semiconductors [PDF]
ChemInform, 2003 AbstractFor Abstract see ChemInform Abstract in Full Text.
Jungwirth, T. +3 more
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Ferromagnetism in Magnetically Doped III-V Semiconductors [PDF]
Physical Review Letters, 2001 4 pages with 3 ...
Litvinov, V. I., Dugaev, V. K.
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