Results 21 to 30 of about 13,483 (261)

Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties

Advanced Science, 2022
Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology.
Lipin Chen, Yoan Léger, Gabriel Loget, Mekan Piriyev, Imen Jadli, Sylvain Tricot, Tony Rohel, Rozenn Bernard, Alexandre Beck, Julie Le Pouliquen, Pascal Turban, Philippe Schieffer, Christophe Levallois, Bruno Fabre, Laurent Pedesseau, Jacky Even, Nicolas Bertru, Charles Cornet   +17 more
doaj   +1 more source

Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique

STAR Protocols, 2023
Summary: Nanostructured III-V semiconductors are attractive for solar energy conversion applications owing to their excellent light harvesting and optoelectronic properties.
Joshua Zheyan Soo, Parvathala Reddy Narangari, Chennupati Jagadish, Hark Hoe Tan, Siva Karuturi   +4 more
doaj   +1 more source

Complex Nanostructures by Pulsed Droplet Epitaxy

Nanomaterials and Nanotechnology, 2011
What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes,
Noboyuki Koguchi, Sergio Bietti, Claudio Somaschini, Stefano Sanguinetti   +3 more
doaj   +1 more source

Light People: Professor Lan Fu

Light: Science & Applications, 2023
Editorial III-V semiconductors are compound semiconductor materials formed by combining group-III and group-V elements. With properties such as direct bandgap, high electron mobility, good homogeneity of large-size crystals and good lattice matching ...
Hui Wang, Cun Yu
doaj   +1 more source

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

IEEE Journal of the Electron Devices Society, 2017
We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface.
Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, Xavier Wallart, Ludovic Desplanque   +6 more
doaj   +1 more source

Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

Nanoscale Research Letters, 2019
In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In0.15Al0.85As/GaAs0.85Sb0.15 strain-reducing layers (SRLs) by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy
A. Salhi, S. Alshaibani, Y. Alaskar, H. Albrithen, A. Albadri, A. Alyamani, M. Missous   +6 more
doaj   +1 more source

On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)

New Journal of Physics, 2021
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non ...
Petr Steindl, Elisa Maddalena Sala, Benito Alén, Dieter Bimberg, Petr Klenovský   +4 more
doaj   +1 more source

Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering

Universitas Scientiarum, 2019
Currently, the obtention of nano-structures based on III-V materials is expensive. This calls for novel and inexpensive nanostructure manufacturing approaches.
S. Torres- Jaramillo, C. Pulzara-Mora, R. Bernal-Correa, M. Venegas de la Cerda, S. Gallardo-Hernández, M. López-López, A. Pulzara-Mora
doaj   +1 more source

Mechanochemical Synthesis and Characterization of Nanostructured ErB4 and NdB4 Rare‐Earth Tetraborides

Advanced Engineering Materials, Volume 27, Issue 6, March 2025.
ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur, Faruk Kaya, Bora Derin, Mustafa Lütfi Öveçoğlu, Ju Li, Duygu Ağaoğulları   +5 more
wiley   +1 more source

III—V Ferromagnetic Semiconductors [PDF]

ChemInform, 2003
AbstractFor Abstract see ChemInform Abstract in Full Text.
F. Matsukura, H. Ohno, T. Dietl
openaire   +1 more source