Results 121 to 130 of about 9,808,693 (352)

NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTOR

Приборы и методы измерений, 2016
Today submicron silicon-on-insulator (SOI) MOSFET structures are widely used in different electronic components and also can be used as sensing elements in some applications.
A. V. Borzdov, V. M. Borzdov, N. N. Dorozhkin   +2 more
doaj   +1 more source

Impact ionization coefficients in Si1−xGex [PDF]

, 1995
We have measured the electron and hole impact ionization coefficients in Si1−xGex alloys. Carrier multiplication measurements were made on relaxed Si1−xGex/Si diodes grown by gas source molecular beam epitaxy.
Lee, J., Bhattacharya, Pallab K., S. H. Li, A. L. Gutierrez-Aitken, Li, S. H., P. K. Bhattacharya, J. Lee, Gutierrez‐aitken, A. L.   +7 more
core   +1 more source

Interface Effects in Ultrathin Silicon on Insulator Films

Advanced Functional Materials, EarlyView.
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici, Gabriele Seguini, Fabiana Taglietti, Roman Gumeniuk, Riccardo Chiarcos, Michele Laus, Johannes Heitmann, Marco Fanciulli, Michele Perego   +8 more
wiley   +1 more source

Characteristics of noise diodes with a graded-gap cathode accounting for self-heating effects

Вісник Харківського національногоуніверситету імені В.Н. Каразіна. Серія: Радіофізика та електроніка
Background. There are a number of limitations to obtaining the generation of electromagnetic oscillations at high frequencies and for functional application of solid-state electronic devices.
V. O. Zozulia, K. H. Prykhodko
doaj   +1 more source

Temperature dependence of impact ionization in GaAs [PDF]

, 2003
The temperature dependence of electron and hole impact ionization in gallium arsenide (GaAs) has been determined from photomultiplication measurements at temperatures between 20 K and 500 K.
Rees, GJ, Rees, G.J., Groves, C., Ghin, R, David, J.P.R., Groves, C, Ghin, R., David, JPR   +7 more
core   +1 more source

Targeting Post‐Irradiation Thyroid Dysfunction: Electrospun Scaffolds As A Dual‐Action Approach for Antioxidant and Immune Modulation

Advanced Healthcare Materials, EarlyView.
Radiation‐induced hypothyroidism follows head and neck radiotherapy due to oxidative stress and inflammation. Electrospun polycaprolactone scaffolds containing adenosine have potential to modulate thyroid repair. Scaffolds enhance thyrocyte proliferation, antioxidant enzymes glutathione peroxidase and catalase, reduce senescence and apoptosis markers ...
Maria Heim, Ella‐Louise Handley, Daniel Grant, Lizi M. Hegarty, Elaine Emmerson, Anthony Callanan   +5 more
wiley   +1 more source

Impact ionization dynamics in silicon by MV/cm THz fields

New Journal of Physics, 2017
We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements.
Abebe T Tarekegne, Hideki Hirori, Koichiro Tanaka, Krzysztof Iwaszczuk, Peter U Jepsen   +4 more
doaj   +1 more source

Design and Synthesis of Peptide‐Polyester Conjugates for Cell‐Mediated Scaffold Degradation

Advanced Healthcare Materials, EarlyView.
This work describes polycaprolactone (PCL)‐based biomaterials engineered to degrade in response to cell‐secreted proteases. A fast‐degrading peptide (Fast) sequence is integrated into a PCL conjugate backbone to produce a biomaterial that is selectively degraded by multiple cell types compared to its scrambled control (ScrFast).
Korina Vida G. Sinad, Natasha K. Hunt, Srujan Singh, Kelly B. Seims, Yingjie Wu, E. Thomas Pashuck, Warren L. Grayson, Lesley W. Chow   +7 more
wiley   +1 more source

Rapid Access to Empirical Impact Ionization Cross Sections for Atoms and Ions across the Periodic Table

Plasma
Electron-impact ionization (EII) processes are essential for modelling high-temperature plasma in quite different research areas, from astrophysics to material science to plasma and fusion research and in several places elsewhere. In most, if not all, of
Stephan Fritzsche, Liguang Jiao, Giorgio Visentin   +2 more
doaj   +1 more source

Anisotropy of impact ionization in WSe₂ field effect transistors. [PDF]

Nano Converg, 2023
Kang T, Choi H, Li J, Kang C, Hwang E, Lee S, Lee S.   +6 more
europepmc   +1 more source