Results 101 to 110 of about 9,808,693 (352)

Electron impact ionization and fragmentation of biofuels [PDF]

, 2019
We present in this article, a review of our recent experimental and theoretical studies published in the literature on electron impact ionization and fragmentation of the primary alcohols methanol, ethanol, 1-propanol and 1-butanol (C1–C4).
Brunger, Michael J., Silva, D. G. M. da, Neves, R.F.C., Santunu Ghosh, García, Gustavo, Campbell, L., Fernandes, Anne C. P., Jones, D. B., Jones, Darryl B., Amorin, R. A. A., Lopes, M.C.A., Neves, Rafael F. C., Raony A. A. Amorim, Nixon, K.L., Duque, H. V., da Silva, Daniel G. M., Kate L. Nixon, Campbell, Laurence, Duque, Humberto V., Duque, H.V., Anne C. P. Fernandes, Rafael F. C. Neves, Ghosh, Shamik, Gustavo García, Darryl B. Jones, otros, ..., Laurence Campbell, Pires, Wesley A. D., Nixon, Kate L., Brunger, M. J., Blanco Ramos, Francisco, Lopes, M. Cristina A., Blanco, Francisco, Francisco Blanco, Gomes, M., Daniel G. M. da Silva, Humberto V. Duque, Blanco, F., M. Cristina A. Lopes, Amorim, R.A.A., Amorim, Raony A. A., Wesley A. D. Pires, Michael J. Brunger, Pires, W.A.D., Lopes, Cristina, Ghosh, Santunu, Fernandes, A. C. P.   +46 more
core   +1 more source

Designing Polymer Nanocomposites for X‐Ray Shielding: Mechanisms, Architectures, and Scalable Processing

Advanced Engineering Materials, EarlyView.
This review highlights advances in lightweight, lead‐free polymer nanocomposites for diagnostic X‐ray shielding. By linking filler chemistry, dispersion, architecture, and photon interaction mechanisms, it establishes structure–performance relationships guiding material design.
Aklilu G. Messele, Hossein Ipakchi, Tizazu H. Mekonnen   +2 more
wiley   +1 more source

On Temperature Dependency of Steep Subthreshold Slope in Dual-Independent-Gate FinFET

IEEE Journal of the Electron Devices Society, 2015
Dual-independent-gate silicon FinFET has demonstrated a steep subthreshold slope (SS) when a positive feedback induced by weak impact ionization is triggered.
Jian Zhang, Jens Trommer, Walter Michael Weber, Pierre-Emmanuel Gaillardon, Giovanni De Micheli   +4 more
doaj   +1 more source

Experimental comparison of models for ultrafast impact ionization is silicon

, 2016
We compare experimentally the exponential and quadratic (Keldysh formula) impact ionization models using THz induced impact ionization in silicon. We demonstrate that the exponential model offers the best description of impact ionization process for ...
Tarekegne, Abebe Tilahun, Iwaszczuk, Krzysztof, Jepsen, Peter Uhd, Peter U. Jepsen, Krzysztof Iwaszczuk, Abebe T. Tarekegne   +5 more
core   +1 more source

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

Advanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero, Meghna Jha, Elsa Veronica Flores‐Vela, Joost Kimpel, Andreas Schaefer, Jiali Guo, Jesika Asatryan, Alberto Peinador Veiga, Shuichi Haraguchi, Per‐Anders Carlsson, Jaime Martín, Mariano Campoy‐Quiles, Christian Müller   +12 more
wiley   +1 more source

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

Advanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand, Kaja H. Hiorth, David Gao, Valeri Afanas'ev, Jaakko Akola, Alexander L. Shluger   +5 more
wiley   +1 more source

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Applied Sciences, 2019
The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are
Chunyan Song, Xuelin Yang, Panfeng Ji, Jun Tang, Shan Wu, Yue Xu, Ali Imran, Maojun Wang, Zhijian Yang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen   +12 more
doaj   +1 more source

Nonlocal impact ionization and avalanche multiplication

, 2010
Impact ionization and avalanche multiplication are conventionally described in terms of ionization coefficients which depend only upon the local electric field.
J P R David, G J Rees, Rees, G J, David, J P R   +3 more
core   +1 more source

Liquid Phase Transmission Electron Microscopy: A Window into the Early Stages of Complex Material Formation

Advanced Functional Materials, EarlyView.
Liquid‐phase transmission electron microscopy enables direct observation of nucleation and growth processes in solution. This review is dedicated to the remembrance of Helmut Cölfen and highlights recent studies on complex materials—oxides, biominerals, organic–inorganic crystals—which were central to his research activity. It summarizes key milestones,
Charles Sidhoum, Vinavadini Ramnarain, Nathaly Ortiz Peña, Dris Ihiawakrim, Clément Sanchez, Ovidiu Ersen   +5 more
wiley   +1 more source

The Origin of Gate Degradation Under HTRB Operation: Buffer Engineering to Suppress Impact Ionization in GaN HEMT

IEEE Access
This study investigates the origin of gate degradation in AlGaN/GaN HEMTs under high-temperature reverse bias (HTRB) conditions and proposes a buffer engineering strategy to mitigate this degradation.
Mahmut Can Soydan, Amir Ali Joya, Amir Ghobadi, Ekmel Ozbay   +3 more
doaj   +1 more source