Results 41 to 50 of about 9,808,693 (352)
IEEE Journal of the Electron Devices Society, 2023 In this work, we demonstrate and model the deep-level defect physics of semi-insulating gallium arsenide bulk photoconductive semiconductor switches (PCSS) with gap size of $10 ~\mu \text{m}$ and $25 ~\mu \text{m}$ in dark-mode operation ...
Yicong Dong +4 more
doaj +1 more source
Impact-Ionization Mass Spectrometry of Cosmic Dust [PDF]
, 2003 In situ characterization of cosmic dust grains typically involves impact-ionization time-of-flight mass spectrometry. Considering the performance and limitations of previous instruments, I designed and tested a novel, compact time-of-flight mass ...
Austin, Daniel Ephraim
core +1 more source
The impact of doping on the efficiency of GaAs –diode with active graded GaInAs side border
Вісник Харківського національногоуніверситету імені В.Н. Каразіна. Серія: Радіофізика та електроніка, 2023 Background. The development of modern communication, security, and medical systems requires compact terahertz radiation sources that can operate under normal conditions.
V. O. Zozulia +2 more
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Electron-impact ionization of Ar
, 2021 We study electron-impact single-ionization cross-sections for all levels of the ground configuration of the Ar2+ ion using the distorted wave approximation. We investigate the influences of the direct ionization and excitation-autoionization processes on
Aušra Kynienė, Valdas Jonauskas
core +1 more source
New Journal of Physics, 2015 We report on the observation of ultrafast impact ionization and carrier generation in high resistivity silicon induced by intense subpicosecond terahertz transients.
Abebe T Tarekegne +4 more
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European Journal of Engineering and Technology ResearchThe doping process is very important in semiconductor technology that is widely used in the production of electronic devices. The effects of doping on the resistivity, mobility and energy band gap of semiconductors are significant and can greatly ...
Md. Bappi Pramanik +3 more
semanticscholar +1 more source
Simulations of Operation Dynamics of Different Type GaN Particle Sensors
Sensors, 2015 The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models.
Eugenijus Gaubas +4 more
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Electron Impact Ionization of 1-Propanol
, 2017 Experimental measurements of the cations created in electron impact ionization have been undertaken for the primary isomer of propanol using a Hidden Quadrupole Mass Spectrometer (EPIC 300), with a mass resolution of 1 amu.
W. Pires +10 more
semanticscholar +1 more source
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE
IEEE Access, 2023 Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMTs) actually represent one of the best candidates for medium-high power and radio frequency applications. As they operate at large bias and electric fields, a comprehensive analysis of the high-
Luigi Balestra +3 more
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Sensors, 2022 The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently.
Małgorzata Kopytko +3 more
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