Results 21 to 30 of about 9,808,693 (352)
Ionization by electron impacts and ionization potential depression
Journal of Physics B: Atomic, Molecular and Optical Physics, 2022 Abstract We calculate the cross-section of ionization by free-electron impacts in high or moderate density plasmas. We show that the so-called ionization potential depression (IPD) strongly affects the magnitude of the cross-section in the high-density domain. We use the well-known IPD formulas of Stewart–Pyatt and Ecker–Kröll.
Benredjem, Djamel +3 more
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A Physics Based Unified Circuit Model for Single Photon and Analog Detector
IEEE Access, 2021 Photodetectors having an internal carrier multiplication mechanism such as avalanche detectors and recently discovered detectors with cycling excitation process (CEP) have attracted tremendous interests for their high sensitivity and flexibility of being
Mohammad Abu Raihan Miah +2 more
doaj +1 more source
Applied Sciences, 2020 In this study, we analyzed the nonradiative recombination impact of multiple exciton generation solar cells (MEGSCs) with a revised detailed balance (DB) limit. The nonideal quantum yield (QY) of a material depends on the surface defects or the status of
Jongwon Lee, Christiana B. Honsberg
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IMPACT IONIZATION IN SHORT ALZGA1–ZN-BASED DIODES [PDF]
Радиофизика и электроника, 2016 The development of millimeter and terahertz wave ranges is one of the main objectives of radiophysics. However, there are not many active elements that can operate in those ranges. Impact ionization in wide gap semiconductors is a fast process and can be
O. V. Botsula +2 more
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Threshold Switching by Bipolar Avalanche Multiplication in Ovonic Chalcogenide Glasses
Advanced Electronic Materials, 2023 An ovonic threshold switch (OTS) based on chalcogenide glasses finds application as a selecting device in storage class memory (SCM) arrays. The OTS operation relies on the threshold switching, where the device switches from the off to the on state ...
Paolo Fantini +3 more
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Ultrafast Laser Processing of Diamond Materials: A Review
Frontiers in Physics, 2021 Diamond laser engineering is of great importance for designing devices, which find applications in radiation sensing and quantum technologies. A review of the present state of the art of experimental and theoretical studies on ultrashort laser ...
Tzveta Apostolova +4 more
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Impact Ionization in InAs Electron Avalanche Photodiodes [PDF]
IEEE Transactions on Electron Devices, 2010 A systematic study of impact ionization, avalanche multiplication, and excess noise in InAs diodes has been carried out, confirming that avalanche multiplication is dominated by the impact ionization of electrons.
A. Marshall, J. David, C. Tan
semanticscholar +2 more sources
Ultrafast strong-field terahertz nonlinear nanometasurfaces
Nanophotonics, 2023 Strong-field terahertz (THz)–matter interaction permits the investigation of nonequilibrium behaviors in the nonperturbative zone. However, the unavailability of a high-field free-space THz source with high repetition rates, excellent beam quality, and ...
Cai Jiahua +5 more
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IEEE Journal of the Electron Devices Society, 2023 In this paper, we report the effect of post-gate metallization annealing on the performance of GaN-based High Electron Mobility Transistors (HEMTs). The performances of HEMTs annealed at 200 °C (HEMT1) and at 400 °C (HEMT2) for 5 minutes in
Sujan Sarkar +4 more
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Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes
Frontiers in Physics, 2021 Low-Gain Avalanche Diodes are a recently-developed class of silicon sensors. Characterized by an internal moderate gain that enhances the signal amplitude and if built on thin silicon substrates of a few tens of microns, they feature fast signals and ...
Gabriele Giacomini
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