Results 31 to 40 of about 9,808,693 (352)
Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (Vgs and Vds, respectively).
Stanislav Tyaginov +11 more
doaj +1 more source
Electron-Impact Ionization of Carbon [PDF]
We present ionization cross-sections of collisions between electrons and carbon atoms using the classical trajectory Monte Carlo method. Total cross-sections are benchmarked against the reported experimental data and the predictions of numerically ...
Otranto, Sebastián +5 more
core +1 more source
LGAD-Based Silicon Sensors for 4D Detectors
Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several ...
Gabriele Giacomini
doaj +1 more source
Epitaxial p-i-n structures grown on native GaN substrates have been fabricated and used to extract the impact ionization coefficients in GaN. The photomultiplication method has been used to experimentally determine the impact ionization coefficients ...
Lina Cao +6 more
semanticscholar +1 more source
Electron-impact ionization of Na
Recent convergent close-coupling calculations of the ionization cross section of Na by Bray [Phys. Rev. Lett. 73, 1088 (1994)] are in poor agreement with the experimental determinations, most of which were carried out in the 1960s. We report here a measurement of the ratio of the peak ionization cross section to the cross section for excitation of the $
Johnston, A.R., Burrow, Paul
openaire +3 more sources
Dielectric-Modulated Impact-Ionization MOS Transistor as a Label-Free Biosensor [PDF]
In this letter, we propose a dielectric-modulated impact-ionization MOS (DIMOS) transistor-based sensor for application in label-free detection of biomolecules.
N. Kannan, M. Kumar
semanticscholar +1 more source
Effects of environment on the electron-impact ionization dynamics of argon clusters
Ionization of the 3p orbital of argon (Ar) monomers, dimers (Ar2), and small-size Ar clusters (Arn,(n)≈15) is investigated for 90-eV electron impact. Experimentally, the three-dimensional momentum vectors of the two outgoing electrons and the residual ...
Zhou, Jiaqi +11 more
core +1 more source
Influence of Hole Current Crowding on Snapback Breakdown in Multi-Finger MOSFETs
The snapback breakdown behavior of multi-finger MOSFETs was investigated using a device simulation. It is shown that snapback breakdown voltage (SNBV) varies depending on the source/drain configuration, even with the same two-finger structure.
Siyoun Lee +4 more
doaj +1 more source
Role of impact ionization in the thermalization of photoexcited Mott insulators [PDF]
We study the influence of the pulse energy and fluence on the thermalization of photodoped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enoughtoproduce ...
P. Werner, K. Held, M. Eckstein
semanticscholar +1 more source
The evolution of electron overdensities in magnetic fields [PDF]
When a neutral gas impinges on a stationary magnetized plasma an enhancement in the ionization rate occurs when the neutrals exceed a threshold velocity. This is commonly known as the critical ionization velocity effect.
MacLachlan, C.S. +2 more
core +1 more source

