Results 11 to 20 of about 9,808,693 (352)

Electron Impact Ionization of Lithium

open access: yesJournal of Research of the National Bureau of Standards, 1982
The electron impact ionization cross section of the neutral lithium atom has been calculated in a distorted wave exchange approximation. The total cross section is in good agreement with available experimental data at incident electron energies above 10 eV. Analytic fits are provided for the 1s and 2s subshell partial cross sections.
Younger, S.M.
openaire   +3 more sources

Electron-impact double ionization of the carbon atom

open access: yesAstronomy & Astrophysics, 2018
Electron-impact single- and double-ionization cross sections and Maxwellian rate coefficients are presented for the carbon atom. Scaling factors are introduced for the electron-impact excitation and ionization cross sections obtained in the distorted ...
V. Jonauskas
semanticscholar   +2 more sources

Impact of Cavity on Molecular Ionization Spectra [PDF]

open access: yesThe Journal of Physical Chemistry Letters
Ionization phenomena are widely studied for decades. With the advent of cavity technology, the question arises how quantum light affects molecular ionization. As the ionization spectrum is recorded from the neutral ground state, it is usually possible to choose cavities which exert negligible effect on the neutral ground state, but have significant ...
Csaba Fábri   +3 more
openaire   +4 more sources

Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs

open access: yesIEEE Journal of the Electron Devices Society, 2021
Constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on recently manufactured commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor (MOS) field-effect transistors (MOSFETs) from three vendors.
Tianshi Liu   +5 more
doaj   +1 more source

SYNCHRONOUS GENERATION OF TWO OSCILLATIONS OF MICROWAVE AND TERAHERTZ BANDS IN AVALANCHE GENERATOR DIODES WITH EXTERNAL SIGNAL [PDF]

open access: yesРадиофизика и электроника, 2016
Multifrequency avalanche-generator diodes (AGD) based on abrupt Si and GaAs p–n-junction from a high-alloy n-region were investigated. The time of realization of output power was calculated and a projection of the attractors in the 2D phase space of AGD ...
K. A. Lukin, P. P. Maksymov
doaj   +1 more source

Gate Grounded Trench I-MOS as an ESD Clamp for Sub-2V Applications

open access: yesIEEE Access, 2023
In this paper, using calibrated 2-D simulations we have reported a new gate grounded trench impact ionization MOS (GGTIMOS) electrostatic discharge (ESD) protection device for sub-2V operating voltage applications.
Avinash Lahgere, Dhruv Shikhar Gupta
doaj   +1 more source

HETEROSTRUCTURE-BASED DIODE WITH THE CATHODE STATIC DOMAIN [PDF]

open access: yesРадиофизика и электроника, 2015
The sources of noise in the microwave and mm-cm bands with high noise power spectral density have a number of important applications, including communications, automotive location and radiomeasurement.
O. V. Botsula, К. H. Prykhodko
doaj   +1 more source

Deep Minima in the Triply Differential Cross Section for Ionization of Atomic Hydrogen by Electron and Positron Impact

open access: yesAtoms, 2020
We investigate ionization of atomic hydrogen by electron- and positron-impact. We apply the Coulomb–Born (CB1) approximation, various modified CB1 approximations, the three body distorted wave (3DW) approximation, and the time-dependent close-coupling ...
C. M. DeMars   +4 more
doaj   +1 more source

Features of impact ionization occuring in semiconductor compaunds InGaN and InAlN

open access: yesВісник Харківського національногоуніверситету імені В.Н. Каразіна. Серія: Радіофізика та електроніка, 2021
Background. The unique spectral position of terahertz range determines the difficulties of developing compact solid-state sources of terahertz radiation.
K. H. Prykhodko   +2 more
doaj   +1 more source

n-MOS Transistor Impact Ionization Boosted by Cumulative Stress Degradation in a 250-nm SiGe BiCMOS Technology

open access: yesIEEE Journal of the Electron Devices Society, 2023
We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature.
Edmundo A. Gutierrez-D.   +2 more
doaj   +1 more source

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