Results 11 to 20 of about 9,808,693 (352)
Electron Impact Ionization of Lithium
The electron impact ionization cross section of the neutral lithium atom has been calculated in a distorted wave exchange approximation. The total cross section is in good agreement with available experimental data at incident electron energies above 10 eV. Analytic fits are provided for the 1s and 2s subshell partial cross sections.
Younger, S.M.
openaire +3 more sources
Electron-impact double ionization of the carbon atom
Electron-impact single- and double-ionization cross sections and Maxwellian rate coefficients are presented for the carbon atom. Scaling factors are introduced for the electron-impact excitation and ionization cross sections obtained in the distorted ...
V. Jonauskas
semanticscholar +2 more sources
Impact of Cavity on Molecular Ionization Spectra [PDF]
Ionization phenomena are widely studied for decades. With the advent of cavity technology, the question arises how quantum light affects molecular ionization. As the ionization spectrum is recorded from the neutral ground state, it is usually possible to choose cavities which exert negligible effect on the neutral ground state, but have significant ...
Csaba Fábri +3 more
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Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs
Constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on recently manufactured commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor (MOS) field-effect transistors (MOSFETs) from three vendors.
Tianshi Liu +5 more
doaj +1 more source
SYNCHRONOUS GENERATION OF TWO OSCILLATIONS OF MICROWAVE AND TERAHERTZ BANDS IN AVALANCHE GENERATOR DIODES WITH EXTERNAL SIGNAL [PDF]
Multifrequency avalanche-generator diodes (AGD) based on abrupt Si and GaAs p–n-junction from a high-alloy n-region were investigated. The time of realization of output power was calculated and a projection of the attractors in the 2D phase space of AGD ...
K. A. Lukin, P. P. Maksymov
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Gate Grounded Trench I-MOS as an ESD Clamp for Sub-2V Applications
In this paper, using calibrated 2-D simulations we have reported a new gate grounded trench impact ionization MOS (GGTIMOS) electrostatic discharge (ESD) protection device for sub-2V operating voltage applications.
Avinash Lahgere, Dhruv Shikhar Gupta
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HETEROSTRUCTURE-BASED DIODE WITH THE CATHODE STATIC DOMAIN [PDF]
The sources of noise in the microwave and mm-cm bands with high noise power spectral density have a number of important applications, including communications, automotive location and radiomeasurement.
O. V. Botsula, К. H. Prykhodko
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We investigate ionization of atomic hydrogen by electron- and positron-impact. We apply the Coulomb–Born (CB1) approximation, various modified CB1 approximations, the three body distorted wave (3DW) approximation, and the time-dependent close-coupling ...
C. M. DeMars +4 more
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Features of impact ionization occuring in semiconductor compaunds InGaN and InAlN
Background. The unique spectral position of terahertz range determines the difficulties of developing compact solid-state sources of terahertz radiation.
K. H. Prykhodko +2 more
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We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature.
Edmundo A. Gutierrez-D. +2 more
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