Results 171 to 180 of about 18,015 (264)

Graphene Quantum Dot‐Induced Microstrain for Framework Stabilization of High‐Entropy Prussian Blue Analog in High‐Current Alkaline Hydrogen Evolution Reaction

open access: yesAdvanced Functional Materials, EarlyView.
The intrinsic distortion‐rich lattice of HEPBA with GQD‐enabled microstrain engineering establishes a mechanistic route toward high‐performance alkaline hydrogen evolution reaction. HEPBA inherently feature heterogeneous local coordination environments arising from multimetal incorporation, while properly introducing GQD during coprecipitation ...
Mia Rinawati   +10 more
wiley   +1 more source

Stacking Fault Complexions in AgSbTe2 Thermoelectrics With Enhanced Electrical Conductivity

open access: yesAdvanced Functional Materials, EarlyView.
Atomic‐scale characterization resolves stacking fault complexion in AgSbTe2, showing Te and Sb segregation along with lattice dilation. Their enhanced effects on phonon scattering are modeled analytically. Although most defects also impede electron transport, local four‐point‐probe measurements reveal higher electrical conductivity at stacking fault ...
Lamya Abdellaoui   +13 more
wiley   +1 more source

Synergistic Solar Interfacial Evaporation and Photocatalysis Enabled by a Hierarchical Porous Hydrogel Reactor

open access: yesAdvanced Functional Materials, EarlyView.
A tree‐inspired hydrogel interfacial reactor couples solar evaporation with photocatalysis for simultaneous desalination and waste water treatment. The bilayer design achieves 2.14 kg·m−2·h−1 evaporation rate with 79% dye degradation under one sun, demonstrating that photothermal heating and evaporation induced pollutant enrichment create a self ...
Yan Zhao   +4 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

Tuning Redox Dynamics in Cu‐Based Electrocatalysts: Effect of Secondary Metals

open access: yesAdvanced Functional Materials, EarlyView.
Advanced analysis of operando X‐ray absorption spectroscopy data reveals that secondary metals affect the redox processes in Cu‐based catalysts for electrocatalytic CO2 reduction. This influences the amount of oxides formed under pulsed reaction conditions and the distribution of reaction products.
Martina Rüscher   +17 more
wiley   +1 more source

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

open access: yesAdvanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie   +16 more
wiley   +1 more source

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim   +9 more
wiley   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

open access: yesAdvanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen   +5 more
wiley   +1 more source

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