Results 161 to 170 of about 120,811,929 (257)

Room-temperature ferroelectrically switchable quantum geometry in few-layer WTe<sub>2</sub> for complementary in-memory computing. [PDF]

open access: yesNat Commun
Wang R   +12 more
europepmc   +1 more source

First demonstration of in-memory computing crossbar using multi-level Cell FeFET. [PDF]

open access: yesNat Commun, 2023
Soliman T   +8 more
europepmc   +1 more source

Multimodal Optoelectronic Synapses for Neuromorphic Intelligence: Coupling Light, Electrical, Thermal, and Beyond

open access: yesAdvanced Functional Materials, EarlyView.
This review revisits optoelectronic neuromorphic devices that extend from unimodal sensing toward multimodal perception. Five types of stimuli‐to‐output information flow that are classified based on the device roles within the system and applications are summarized and discussed.
Jihyun Shin   +6 more
wiley   +1 more source

High-clockrate free-space optical in-memory computing. [PDF]

open access: yesLight Sci Appl
Liang Y   +14 more
europepmc   +1 more source

Cellular automata imbedded memristor-based recirculated logic in-memory computing. [PDF]

open access: yesNat Commun, 2023
Liu Y   +7 more
europepmc   +1 more source

Bioinspired Co‐Assembly Enables Multiscale Architected Hydrogels for 3D Printing With Integrated Antibacterial and Bioactive Functions

open access: yesAdvanced Functional Materials, EarlyView.
A multicomponent supramolecular hydrogel integrating cell‐adhesive and antibacterial peptides within an alginate‐cellulose nanofibril matrix is developed. Peptide co‐assembly simultaneously strengthens the hydrogel network, improves extrusion printability, and imparts cell‐adhesive and antibacterial functions, offering a versatile platform for ...
Mor Tsuriano‐Zernichov   +4 more
wiley   +1 more source

Compact MEOL OxRAM with 14 conductance levels for Dense Embedded Inference Computing

open access: yes
International audienceFor the first time, a compact 1T1R memory cell with 14 conductance levels is demonstrated in 28nm node technology. The HfO2-based OxRAM is integrated in the 40nm×40nm drain contact of GO1 FDSOI transistors, opening the way towards ...
Boulard, Francois   +11 more
core   +1 more source

Ultrafast non-volatile charge storage and mid-infrared photoluminescence in LuminoMem tellurium devices for in-memory computing. [PDF]

open access: yesNat Commun
Liang D   +14 more
europepmc   +1 more source

Cascadable in-memory computing based on symmetric writing and readout. [PDF]

open access: yesSci Adv, 2022
Wang L   +19 more
europepmc   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

open access: yesAdvanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam   +10 more
wiley   +1 more source

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