Results 141 to 150 of about 131,401 (219)

An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories. [PDF]

Front Neurosci, 2022
Baroni A, Glukhov A, Pérez E, Wenger C, Calore E, Schifano SF, Olivo P, Ielmini D, Zambelli C.   +8 more
europepmc   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Phase-Change Memory for In-Memory Computing. [PDF]

Chem Rev
Syed GS, Le Gallo M, Sebastian A.
europepmc   +1 more source

In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor. [PDF]

Materials (Basel), 2021
Vasileiadis N, Ntinas V, Sirakoulis GC, Dimitrakis P.   +3 more
europepmc   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

Mixed-mode in-memory computing: towards high-performance logic processing in a memristive crossbar array. [PDF]

Commun Eng
Du N, Polian I, Bengel C, Li K, Chen Z, Zhao X, Hübner U, Chen LW, Liu F, Di Ventra M, Menzel S, Krüger H.   +11 more
europepmc   +1 more source

Accelerating Inference of Convolutional Neural Networks Using In-memory Computing. [PDF]

Front Comput Neurosci, 2021
Dazzi M, Sebastian A, Benini L, Eleftheriou E.   +3 more
europepmc   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Analog in-memory computing attention mechanism for fast and energy-efficient large language models. [PDF]

Nat Comput Sci
Leroux N, Manea PP, Sudarshan C, Finkbeiner J, Siegel S, Strachan JP, Neftci E.   +6 more
europepmc   +1 more source

Medium-Temperature-Oxidized GeO_x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing. [PDF]

Nanoscale Res Lett, 2022
Udaya Mohanan K, Cho S, Park BG.
europepmc   +1 more source