Results 131 to 140 of about 131,401 (219)

Nonvolatile Reconfigurable Synthetic Antiferromagnetic Devices Induced by Spin-Orbit Torque for Multifunctional In-Memory Computing. [PDF]

Nanomaterials (Basel)
Song M, Liu J, Zhu Z.
europepmc   +1 more source

Device quantization policy in variation-aware in-memory computing design. [PDF]

Sci Rep, 2022
Chang CC, Li ST, Pan TL, Tsai CM, Wang IT, Chang TS, Hou TH.   +6 more
europepmc   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

Advanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova, Anna Chiara Bressi, Marina Galliani, Attilio Marino, Gianni Ciofani, Eduardo Machado‐Charry, Hilda Gomez Bernal, Alessandra Francini, Luca Sebastiani, Francesco Greco   +9 more
wiley   +1 more source

Recent advances in ferroelectric materials, devices, and in-memory computing applications. [PDF]

Nano Converg
Hwang H, Youn S, Kim H.
europepmc   +1 more source

Self-powered high-sensitivity all-in-one vertical tribo-transistor device for multi-sensing-memory-computing. [PDF]

Nat Commun, 2022
Liu Y, Liu D, Gao C, Zhang X, Yu R, Wang X, Li E, Hu Y, Guo T, Chen H.   +9 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Multimodal ion-gated transistor based on 2D superionic conductor for in-memory computing in deep learning. [PDF]

Nat Commun
Tong B, Du T, Du J, Yu X, Tong J, Xu J, Li W, Liu Z, Li C, Ren W.   +9 more
europepmc   +1 more source

Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO₂-Based FeFETs for In-Memory-Computing Applications. [PDF]

ACS Appl Electron Mater, 2022
Raffel Y, De S, Lederer M, Olivo RR, Hoffmann R, Thunder S, Pirro L, Beyer S, Chohan T, Kämpfe T, Seidel K, Heitmann J.   +11 more
europepmc   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices. [PDF]

Natl Sci Rev
Zhong G, Yan J, Tang M, Deng H, Tan Y, Zhong X, Li C, Fan Z, Wang J, Li J.   +9 more
europepmc   +1 more source