Results 201 to 210 of about 120,811,929 (257)

Atomic‐Scale Visualization of Topotactic Resistive Switching in Epitaxial La0.5Sr0.5CoOx Neuromorphic Memristors

Advanced Functional Materials, EarlyView.
Forming‐free epitaxial Pt/La0.5Sr0.5CoOx (LSCO)/La0.5Sr0.5MnO3 (LSMO) memristors exhibit heterogeneous and partially reversible topotactic switching involving brownmillerite (BM)‐, Grenier (GN)‐like‐, and perovskite (PV)‐like configurations. Atomic‐resolution scanning transmission electron microscopy and in situ transmission electron microscopy resolve
Zi‐Qin Hong, Yen‐Jung Chen, Shih‐Chao Chang, Jui‐yuan Chen, Jan‐Chi Yang, Wen‐Wei Wu   +5 more
wiley   +1 more source

Fully analog iteration for solving matrix equations with in-memory computing. [PDF]

Sci Adv
Li J, Xue Y, Li Y, Jia H, Zhou Z, Yang L, Ren S, Chen J, He Y, Xue K, Xu M, Miao X.   +11 more
europepmc   +1 more source

3D‐Printed Gradient Shape‐Memory Strain Sensors With Rewritable Gauge Factors

Advanced Functional Materials, EarlyView.
A 3D‐printed shape‐memory strain sensor combines thermomechanical programming with gradient architectural design. Preset strain rewrites the gauge factor (GF), while the gradient geometry amplifies the response through strain redistribution. Reprogrammable sensitivity enables the same sensor to detect weak pulse signals and monitor large‐amplitude ...
Xuan Zhang, Wenjie Qiao, Kaixin Jiang, Sherry Chen, Hanyu Cui, Kirsten Dyer, Xuefeng Zhu, Ting Wang, Xuehua Zhang, Ben Bin Xu, Jie Kong   +10 more
wiley   +1 more source

CMOS-compatible flash-gated thyristor-based neuromorphic module with small area and low energy consumption for in-memory computing. [PDF]

Sci Adv
Ko J, Im J, Kim J, Shin W, Koo RH, Park SH, Woo SY, Lee JH.   +7 more
europepmc   +1 more source

Magneto‐Ionic Devices With Polymer‐Based Electrolytes

Advanced Functional Materials, EarlyView.
Polymer electrolytes are introduced for magneto‐ionic devices based on hydroxide and hydrogen ions. The magneto‐ionic effect results in a pronounced voltage‐controlled variation of coercivity in both devices. The switching speed is in the range of 100 ms.
Markus Gößler, Richard Weber, Michael Sommer, Karin Leistner   +3 more
wiley   +1 more source

Nitrospinics: Nitride Materials for Spin‐Orbit and Orbital Torques From Memory to Artificial Intelligence

Advanced Functional Materials, EarlyView.
Further advances in applications can be anticipated through the development of unique and functional materials beyond conventional alloys. Nitrogen enables tailor‐made orbital textures in various transition‐metal hosts, paving the way for devices ranging from spintronics memory to artificial intelligence hardware.
Prabhat Kumar, Gaurav Kumar Shukla, Yoshio Miura, Shinji Isogami   +3 more
wiley   +1 more source

Deep Bayesian active learning using in-memory computing hardware. [PDF]

Nat Comput Sci
Lin Y, Gao B, Tang J, Zhang Q, Qian H, Wu H.   +5 more
europepmc   +1 more source

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing. [PDF]

Adv Mater
Chen C, Zhou Y, Tong L, Pang Y, Xu J.
europepmc   +1 more source

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source