Results 211 to 220 of about 120,811,929 (257)

Insights of BDAPbI₄-Based Flexible Memristor for Artificial Synapses and In-Memory Computing. [PDF]

ACS Omega
Patel M, Gosai J, Patel P, Roy M, Solanki A.   +4 more
europepmc   +1 more source

Proximity‐Tuned Magnetic and Transport Anomalies in All‐Epitaxial Fe5−xGeTe2/WSe2 Van der Waals Heterostructures

Advanced Functional Materials, EarlyView.
All‐epitaxial and scalable ferromagnetic/non‐magnetic Fe5−xGeTe2/WSe2 van der Waals (vdW) heterostructures exhibiting room‐temperature magnetism and perpendicular magnetic anisotropy (PMA) are realized. The system displays proximity‐tuned magnetic anisotropy, thickness‐dependent unconventional Hall effects, and temperature‐dependent sign reversal of ...
Hua Lv, Tauqir Shinwari, Kacho Imtiyaz Ali Khan, Jens Herfort, Chen Chen, Joan M. Redwing, Mehak Loyal, Gerhard Jakob, Mathias Kläui, Achim Trampert, Bernat Mundet, Belén Ballesteros, Manfred Ramsteiner, Roman Engel‐Herbert, Michael Hanke, João Marcelo J. Lopes   +15 more
wiley   +1 more source

The Role of Phase-Change Memory in Edge Computing and Analog In-Memory Computing: An Overview of Recent Research Contributions and Future Challenges. [PDF]

Sensors (Basel)
Antolini A, Zavalloni F, Lico A, Quqa S, Greco L, Mangia M, Pareschi F, Pasotti M, Franchi Scarselli E.   +8 more
europepmc   +1 more source

Switching Superconductivity with Uniaxial Strain in a high‐Tc${\rm T}_{c}$ Cuprate Superconductor

Advanced Functional Materials, EarlyView.
Uniaxial strain is demonstrated as a new scheme for a superconductivity switch. Exploiting the large strain‐induced Tc shift in a cuprate superconductor enables robust switching between superconducting and normal states over 100 cycles with only 0.1% strain.
Baizhi Gao, Qianli Ma, Bruce D. Gaulin, Young‐June Kim   +3 more
wiley   +1 more source

Rapid learning with phase-change memory-based in-memory computing through learning-to-learn. [PDF]

Nat Commun
Ortner T, Petschenig H, Vasilopoulos A, Renner R, Brglez Š, Limbacher T, Piñero E, Linares-Barranco A, Pantazi A, Legenstein R.   +9 more
europepmc   +1 more source

Programming Neuromorphic Plasticity Through Ionic and Electronic Coupling in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee, Hyoik Jang, Ji Hwan Kim, Jonghyun Won, Namhee Kim, Wonseok Shin, Giwon Lee, Eunho Lee, Daegun Kim, Sungjun Park   +9 more
wiley   +1 more source

Physical unclonable in-memory computing for simultaneous protecting private data and deep learning models. [PDF]

Nat Commun
Yue W, Wu K, Li Z, Zhou J, Wang Z, Zhang T, Yang Y, Ye L, Wu Y, Bu W, Wang S, He X, Yan X, Tao Y, Yan B, Huang R, Yang Y.   +16 more
europepmc   +1 more source

Microfluidic Architecting of Patchy MXene Core‐Shell Particles for Ultralow‐Loading Photothermal Shape‐Memory Actuation

Advanced Functional Materials, EarlyView.
Spatially distributing Ti3C2Tx nanosheets into core‐shell architecture, rather than as directly dispersed flakes, mitigates aggregation and enhances photon harvesting. When the Ti3C2Tx core‐shell particles are incorporated into a shape‐memory polymer matrix at an ultralow loading of 0.0024 wt%, the improved photothermal conversion translates into ...
May Maung Zaw, Maxim M. Trubyanov, Qian Wang, Siyu Chen, Hongyi Chen, Keyu Chen, Hongbin Sun, Muthu Vignesh Vellayappan, Xiaoying Qi, Sharon Mui Ling Nai, Kostya S. Novoselov, David W. Rosen, Daria V. Andreeva   +12 more
wiley   +1 more source

IMPACT: In-Memory ComPuting Architecture based on Y-FlAsh Technology for Coalesced Tsetlin machine inference. [PDF]

Philos Trans A Math Phys Eng Sci
Ghazal O, Wang W, Kvatinsky S, Merchant F, Yakovlev A, Shafik R.   +5 more
europepmc   +1 more source

Efficient Magnetization Switching Driven by Orbital Torque in Light 3d Transition‐Metal Nitrides

Advanced Functional Materials, EarlyView.
Efficient magnetization switching is demonstrated through orbital torque generated from light 3d transition‐metal nitride. Transition‐metal nitrides are established as effective sources of orbital angular momentum for current‐induced switching, highlighting their potential for low‐power next‐generation orbitronic devices beyond conventional heavy‐metal‐
Gaurav K. Shukla, Yoshio Miura, Mayank K. Singh, Shinji Isogami   +3 more
wiley   +1 more source