Results 231 to 240 of about 115,019,574 (294)

Adapting magnetoresistive memory devices for accurate and on-chip-training-free in-memory computing. [PDF]

Sci Adv
Xiao Z, Naik VB, Lim JH, Hou Y, Wang Z, Shao Q.   +5 more
europepmc   +1 more source

Functional Differentiation of Type II and Type I Collagen Articular Models in Synovial Fluid Film Formation and Recombinant Equine Lubricin Retention

Advanced Functional Materials, EarlyView.
Collagen II coatings support the formation of synovial fluid nanofilms, while collagen I coatings do not. Both bind recombinant equine lubricin similarly. These findings may help explain articular cartilage surface joint dysfunction, inform biomaterial design for synovial joint repair, and expand on lubricin‐based osteoarthritis therapies.
Diego R. Jaramillo Pinto, Nicolas L. Mendoza, Syeda Tajin Ahmed, Yidan Wen, Lenka Vitkova, Spencer M. Witt, Kaleb A. Cutter, Ummay Honey, Matthew J. Paszek, Heidi L. Reesink, Lawrence J. Bonassar, Kevin De France, Roberto C. Andresen Eguiluz   +12 more
wiley   +1 more source

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads. [PDF]

Sci Rep
Yu E, K GK, Saxena U, Roy K.
europepmc   +1 more source

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

Advanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung, Junghyun Koo, Hongseung Lee, Donghwan Kim, Dongho Won, Weideng Sun, Jaewook Yoo, Minah Park, Seohyeon Park, Seongbin Lim, Joonsung Lee, Sungjune Park, Sangmoon Yoon, Tae Wan Kim, Bharat Jalan, Gang Qiu, Kiyoung Lee, Hagyoul Bae   +17 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

Advanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim, Ting‐Ching Chu, Zhehao Zhu, Lincoln J. Lauhon   +3 more
wiley   +1 more source

Mosaic: in-memory computing and routing for small-world spike-based neuromorphic systems. [PDF]

Nat Commun
Dalgaty T, Moro F, Demirağ Y, De Pra A, Indiveri G, Vianello E, Payvand M.   +6 more
europepmc   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source

Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM). [PDF]

Micromachines (Basel)
Xiao H, Zhao R, Liu Y, Liu Y, Chen J.
europepmc   +1 more source

Oxygen‐Vacancy‐Regulated Crystallization and Ferroelectric Phase Stabilization in Hf0.5Zr0.5O2 Thin Films

Advanced Functional Materials, EarlyView.
Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong, Jaewook Lee, Junseong Seo, Hyojun Choi, Dong Hee Han, Seungjae Heo, Tae‐Yeol Jeon, Yunseok Kim, Younghwan Lee, Min Hyuk Park   +9 more
wiley   +1 more source