Results 221 to 230 of about 118,830,318 (300)

Atomic‐Scale Visualization of Topotactic Resistive Switching in Epitaxial La0.5Sr0.5CoOx Neuromorphic Memristors

Advanced Functional Materials, EarlyView.
Forming‐free epitaxial Pt/La0.5Sr0.5CoOx (LSCO)/La0.5Sr0.5MnO3 (LSMO) memristors exhibit heterogeneous and partially reversible topotactic switching involving brownmillerite (BM)‐, Grenier (GN)‐like‐, and perovskite (PV)‐like configurations. Atomic‐resolution scanning transmission electron microscopy and in situ transmission electron microscopy resolve
Zi‐Qin Hong, Yen‐Jung Chen, Shih‐Chao Chang, Jui‐yuan Chen, Jan‐Chi Yang, Wen‐Wei Wu   +5 more
wiley   +1 more source

Deep Bayesian active learning using in-memory computing hardware. [PDF]

Nat Comput Sci
Lin Y, Gao B, Tang J, Zhang Q, Qian H, Wu H.   +5 more
europepmc   +1 more source

3D‐Printed Gradient Shape‐Memory Strain Sensors With Rewritable Gauge Factors

Advanced Functional Materials, EarlyView.
A 3D‐printed shape‐memory strain sensor combines thermomechanical programming with gradient architectural design. Preset strain rewrites the gauge factor (GF), while the gradient geometry amplifies the response through strain redistribution. Reprogrammable sensitivity enables the same sensor to detect weak pulse signals and monitor large‐amplitude ...
Xuan Zhang, Wenjie Qiao, Kaixin Jiang, Sherry Chen, Hanyu Cui, Kirsten Dyer, Xuefeng Zhu, Ting Wang, Xuehua Zhang, Ben Bin Xu, Jie Kong   +10 more
wiley   +1 more source

Magneto‐Ionic Devices With Polymer‐Based Electrolytes

Advanced Functional Materials, EarlyView.
Polymer electrolytes are introduced for magneto‐ionic devices based on hydroxide and hydrogen ions. The magneto‐ionic effect results in a pronounced voltage‐controlled variation of coercivity in both devices. The switching speed is in the range of 100 ms.
Markus Gößler, Richard Weber, Michael Sommer, Karin Leistner   +3 more
wiley   +1 more source

Insights of BDAPbI₄-Based Flexible Memristor for Artificial Synapses and In-Memory Computing. [PDF]

ACS Omega
Patel M, Gosai J, Patel P, Roy M, Solanki A.   +4 more
europepmc   +1 more source

Nitrospinics: Nitride Materials for Spin‐Orbit and Orbital Torques From Memory to Artificial Intelligence

Advanced Functional Materials, EarlyView.
Further advances in applications can be anticipated through the development of unique and functional materials beyond conventional alloys. Nitrogen enables tailor‐made orbital textures in various transition‐metal hosts, paving the way for devices ranging from spintronics memory to artificial intelligence hardware.
Prabhat Kumar, Gaurav Kumar Shukla, Yoshio Miura, Shinji Isogami   +3 more
wiley   +1 more source

The Role of Phase-Change Memory in Edge Computing and Analog In-Memory Computing: An Overview of Recent Research Contributions and Future Challenges. [PDF]

Sensors (Basel)
Antolini A, Zavalloni F, Lico A, Quqa S, Greco L, Mangia M, Pareschi F, Pasotti M, Franchi Scarselli E.   +8 more
europepmc   +1 more source

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

Rapid learning with phase-change memory-based in-memory computing through learning-to-learn. [PDF]

Nat Commun
Ortner T, Petschenig H, Vasilopoulos A, Renner R, Brglez Š, Limbacher T, Piñero E, Linares-Barranco A, Pantazi A, Legenstein R.   +9 more
europepmc   +1 more source

Proximity‐Tuned Magnetic and Transport Anomalies in All‐Epitaxial Fe5−xGeTe2/WSe2 Van der Waals Heterostructures

Advanced Functional Materials, EarlyView.
All‐epitaxial and scalable ferromagnetic/non‐magnetic Fe5−xGeTe2/WSe2 van der Waals (vdW) heterostructures exhibiting room‐temperature magnetism and perpendicular magnetic anisotropy (PMA) are realized. The system displays proximity‐tuned magnetic anisotropy, thickness‐dependent unconventional Hall effects, and temperature‐dependent sign reversal of ...
Hua Lv, Tauqir Shinwari, Kacho Imtiyaz Ali Khan, Jens Herfort, Chen Chen, Joan M. Redwing, Mehak Loyal, Gerhard Jakob, Mathias Kläui, Achim Trampert, Bernat Mundet, Belén Ballesteros, Manfred Ramsteiner, Roman Engel‐Herbert, Michael Hanke, João Marcelo J. Lopes   +15 more
wiley   +1 more source