Results 241 to 250 of about 118,830,318 (300)

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads. [PDF]

Sci Rep
Yu E, K GK, Saxena U, Roy K.
europepmc   +1 more source

Engineering Antigen Density on M13 Bacteriophage for Personalized Nanovaccine

Advanced Healthcare Materials, EarlyView.
Increasing antigen density on the phage capsid impacts phage uptake and antigen cross‐presentation by antigen‐presenting cells, leading to enhanced activation of antitumor CD8+ T cells in the draining lymph nodes. These activated CD8+ T cells subsequently recognize the antigen‐expressing tumors and mediate their specific cytotoxic killing, thereby ...
Shengnan Huang, Allison Madow, Jack Rudrum, Huaiyao Peng, Hao Nghi Luu, Peiyan Dong, Jifa Qi, Angela M. Belcher   +7 more
wiley   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Mosaic: in-memory computing and routing for small-world spike-based neuromorphic systems. [PDF]

Nat Commun
Dalgaty T, Moro F, Demirağ Y, De Pra A, Indiveri G, Vianello E, Payvand M.   +6 more
europepmc   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM). [PDF]

Micromachines (Basel)
Xiao H, Zhao R, Liu Y, Liu Y, Chen J.
europepmc   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell. [PDF]

Nat Commun
Jebali F, Majumdar A, Turck C, Harabi KE, Faye MC, Muhr E, Walder JP, Bilousov O, Michaud A, Vianello E, Hirtzlin T, Andrieu F, Bocquet M, Collin S, Querlioz D, Portal JM.   +15 more
europepmc   +1 more source

An SRAM-based fully-integrated analog closed-loop in-memory computing accelerator

Mannocci P, Zucchelli C, Andreoli I, Pezzoli A, Melacarne E, Pedretti G, Sancandi F, Villa C, Sun Z, Spagnolini U, Ielmini D.   +10 more
europepmc   +1 more source