Results 251 to 260 of about 1,236,235 (304)

In situ growth of individual graphene layers

open access: yes, 2015
Kling, Jens   +2 more
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In-Situ Control of Strained Heterostructure Growth

Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, 1993
This paper reports the metalorganic vapor phase epitaxial growth of pseudomorphic InAs/InP single quantum wells (SQWs) on (001) InP substrates using in-situ surface photo-absorption (SPA) monitoring, and reports on the optical characterization of them.
Yasuyuki Kobayashi Yasuyuki Kobayashi   +1 more
openaire   +1 more source

In Situ Reflectometry During LPCVD Tungsten Growth.

MRS Proceedings, 1989
AbstractThe formation of LPCVD tungsten by means of the reduction of WF6 with Si, H2 and SiH4 is monitored in situ using a wavelength adjustable reflectometer. The initial self stopping growth of W by Si reduction is strongly dependant on surface status [1].
Holleman, Jisk   +2 more
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In-situ Ellipsometry and in-situ Raman thin film growth monitoring

Optical Interference Coatings, 2004
Fast and reliable optical in-situ process diagnostics by spectroscopic ellipsometry and Raman scattering spectroscopy demonstrated. Applications: design and control of dielectric multilayer mirros for soft-x-ray applications and solar-cell absorber layers deposited within a roll-to-roll system.
Mathias Schubert   +5 more
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In-situ YBa2Cu3Ox growth rate analysis

Physica C: Superconductivity, 1997
Abstract The growth of large mono-domain YBa 2 Cu 3 O x (Y-123) pellets has been studied with levitation applications in mind. The Top-Seed Melt-Texturing method (TSMT) was applied using a SmBa 2 Cu 3 O x seed. During the process, a video recording was made of the evolution on the sample surface.
Gautier-Picard, P.   +2 more
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In situ characterization of MOCVD growth

1993 (5th) International Conference on Indium Phosphide and Related Materials, 2002
In situ elastic light scattering was used to characterize, in real-time, the topography of InP-InGaAsP and GaAs epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Phenomena such as the evolution of the atomic terrace and interface included roughness were observed.
J.E. Epler, H.P. Schweizer, T.A. Jung
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In situgrowth kinetics of ZnO nanobelts

Nanotechnology, 2008
For the first time, the growth of ZnO nanobelts was monitored in situ using x-ray diffraction. The growth was carried out by heating metallic zinc powder in air at temperatures ranging from 368 to 568 °C. The morphology depends on both the growth temperature and the rate of heating to that temperature.
Melanie, Kirkham   +2 more
openaire   +2 more sources

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