Results 101 to 110 of about 309,473 (340)

Simulation study of a new InGaN p-layer free Schottky based solar cell

open access: yes, 2016
On the road towards next generation high efficiency solar cells, the ternary Indium Gallium Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum through the change in its Indium composition.
Adaine, Abdoulwahab   +2 more
core   +3 more sources

Polymer Network Modified Perovskite for High‐Performance Pure Blue Light‐Emitting Diodes

open access: yesAdvanced Functional Materials, EarlyView.
A polymer network of poly(4‐vinylphenol) (PVPh) is introduced to improve pure blue perovskite light‐emitting diodes. PVPh effectively passivates defects, enhances film morphology, reduces lattice strain, and suppresses ion migration. These effects lead to record device performance, achieving 9.82% external quantum efficiency and stable blue emission at
Zhongkai Yu   +11 more
wiley   +1 more source

Trap Passivation in Indium-Based Quantum Dots through Surface Fluorination: Mechanism and Applications.

open access: yesACS Nano, 2018
Treatment of InP colloidal quantum dots (QDs) with hydrofluoric acid (HF) has been an effective method to improve their photoluminescence quantum yield (PLQY) without growing a shell. Previous work has shown that this can occur through the dissolution of
Tae-Gon Kim   +6 more
semanticscholar   +1 more source

Cross‐Layer Molecular Design for Coherent Interface Passivation in Rigid and Flexible Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
A cross‐layer passivation strategy employing molecularly designed thiazol‐5‐ylmethanamine hydrochloride (TMACl) enables coherent defect regulation at the SnO2/perovskite interface, stabilizes both layers, promotes phase‐pure α‐FAPbI3 formation, and enhances charge extraction, delivering PCEs of 26.44% in rigid and 24.72% in flexible perovskite solar ...
Fan Shen   +16 more
wiley   +1 more source

Unlocking Multi‐Valley Energy Pockets and Interface‐Induced Phonon Filtering in InSb Thermoelectrics by Reaction‐Driven Interface Engineering

open access: yesAdvanced Functional Materials, EarlyView.
InSb, a narrow‐bandgap semiconductor with high carrier mobility, is promising for thermoelectric energy conversion but suffers from high lattice thermal conductivity and strong bipolar conduction. Here, in situ interface engineering using Co2O3 nanoprecursors forms hierarchical CoSbx/In2O3/CoSb3 heterostructures that enhance phonon scattering and ...
Jiwu Xin   +10 more
wiley   +1 more source

InP nanocrystals on silicon for optoelectronic applications

open access: yes, 2012
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical
Helm, Manfred   +10 more
core   +1 more source

Self‐Healing and Stretchable Synaptic Transistor

open access: yesAdvanced Functional Materials, EarlyView.
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo   +10 more
wiley   +1 more source

Statistical analysis and optimization of recovering indium from jarosite residue with vacuum carbothermic reduction by response surface methodology (RSM)

open access: yesGreen Processing and Synthesis, 2017
Vast jarosite residue was produced from traditional zinc hydrometallurgy process in China. It is necessary to recover valuable metals from the jarosite residue. Indium is the one of them.
Ma Hongzhou   +3 more
doaj   +1 more source

Optimal design study of high efficiency indium phosphide space solar cells [PDF]

open access: yes
Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements.
Flood, Dennis J., Jain, Raj K.
core   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min   +13 more
wiley   +1 more source

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