Results 91 to 100 of about 309,473 (340)

Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects

open access: yes, 2012
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects.
Ahmed, Imtiaz   +5 more
core   +1 more source

The Role of Ultra‐Thin Buffer Layers for Achieving Ultra‐Low Dark Currents in Single‐Component Organic Photodetectors

open access: yesAdvanced Functional Materials, EarlyView.
Here, SubNc single‐component organic photodiodes (SC‐OPDs) are investigated, which achieve highly competitive performance metrics, including high EQE, ultra‐low JD, and high specific detectivity (D*). This study emphasizes the critical role of an organic buffer layer in studying the interface energetics and effects to achieve state‐of‐the‐art ...
Anncharlott Kusber   +12 more
wiley   +1 more source

Indium-Mediated Allylation of Carbonyl Compounds in Ionic Liquids: Effect of Salts in Ionic Liquids

open access: yesMolecules, 2018
The In-mediated allylation of carbonyl compounds can be performed in various types of solvents including ionic liquids. However, we have found that in [bmim][BF4] (where bmim = 1-butyl-3-methylimidazolium), the In-mediated coupling of crotyl bromide with
Tsunehisa Hirashita   +4 more
doaj   +1 more source

Qubit compatible superconducting interconnects

open access: yes, 2017
We present a fabrication process for fully superconducting interconnects compatible with superconducting qubit technology. These interconnects allow for the 3D integration of quantum circuits without introducing lossy amorphous dielectrics.
Arya, K.   +29 more
core   +1 more source

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon   +7 more
wiley   +1 more source

Crystal structure of dimethyl-1κ2C-bis(μ-4-methylphenolato-1:2κ2O:O)(N,N,N′,N′-tetramethylethylenediamine-2κ2N,N′)indium(III)lithium(I)

open access: yesActa Crystallographica Section E: Crystallographic Communications, 2015
The mixed bimetallic title compound, [InLi(CH3)2(C7H7O)2(C6H16N2)] or [(tmeda)Li-μ-(4-MeC6H4O)2InMe2] (tmeda is N,N,N′,N′-tetramethylethylenediamine), exhibits a four-membered LiO2In ring core via bridging 4-methylphenolate groups.
Glen G. Briand   +2 more
doaj   +1 more source

Thermocouples of molybdenum and iridium alloys for more stable vacuum-high temperature performance [PDF]

open access: yes, 1978
Thermocouples providing stability and performance reliability in systems involving high temperatures and vacuums by employing a bimetallic thermocouple sensor are described.
Morris, J. F.
core   +1 more source

Observation of beta decay of In-115 to the first excited level of Sn-115

open access: yes, 2004
In the context of the LENS R&D solar neutrino project, the gamma spectrum of a sample of metallic indium was measured using a single experimental setup of 4 HP-Ge detectors located underground at the Gran Sasso National Laboratories (LNGS), Italy.
Ambrosio   +37 more
core   +1 more source

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong   +6 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

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