Results 71 to 80 of about 241,825 (343)

Keggin-type P-W-Mo-V polyoxometalates in electrocatalyzed CO2 reduction using indium electrodes

Polyoxometalates
Electrochemical CO2 reduction reaction (CO2RR) driven by indium-based catalysts can convert CO2 into C1 products with specific energy densities and relatively low mass.
Yuehua Tai, Wencong Sun, Dong Yao, Li Zhou, Wenxue Tian, Haoxun Yan, Chunxiang Li   +6 more
doaj   +1 more source

Synthesis of Water-Soluble Copolymers of N-vinylpyrrolidone with N-vinyldithiocarbamate as Multidentate Polymeric Chelation Systems and Their Complexes with Indium and Gallium

Molecules, 2020
Dithiocarbamate (DTC) derivatives of N-vinylpyrrolidone-N-vinylamine (VP–VA) copolymers were synthesized via reaction between the copolymers and carbon disulfide in alkaline medium; molecular masses of the products were 12 and 29 kDa; the VP:VDTC ratios ...
Nikolay I. Gorshkov, Andrey Yu. Murko, Irina I. Gavrilova, Marina A. Bezrukova, Albert I. Kipper, Valerii D. Krasikov, Evgenii F. Panarin   +6 more
doaj   +1 more source

Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures [PDF]

, 1999
Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Gillin, WP
core   +1 more source

Band Alignment in In‐Oxo Metal Porphyrin SURMOF Heterojunctions

Advanced Functional Materials, EarlyView.
Porphyrin core metalation in indium‑oxo SURMOFs enables systematic tuning of band edge positions without altering the crystal structure. First‑principles calculations reveal type‑I and type‑II heterostructures as well as multi‑junction energy cascades, establishing a modular strategy for exciton funneling and charge separation in optoelectronic ...
Puja Singhvi, Nina Vankova, Thomas Heine
wiley   +1 more source

Fixed-Bed Adsorption of Gallium and Indium from EoL CIGS Leachates on Extractant-Mesoporous Carbon: Integrated Experimental Simulation Approach

Surfaces
Although the exponential increase in photovoltaic installations does contribute to mitigating climate change, it has posed the problem of photovoltaic (PV) residue. As PV panels contain strategic metals, their recovery has become a priority.
Víctor Ramos, Alejandra Vázquez Adán, Arturo Jiménez, Rubén Miranda, Eduardo Díez, Araceli Rodríguez   +5 more
doaj   +1 more source

Indium-Catalyzed Annulation of o-Acylanilines with Alkoxyheteroarenes: Synthesis of Heteroaryl[b]quinolines and Subsequent Transformation to Cryptolepine Derivatives

Molecules, 2018
We disclose herein the first synthetic method that is capable of offering heteroaryl[b]quinolines (HA[b]Qs) with structural diversity, which include tricyclic and tetracyclic structures with (benzo)thienyl, (benzo)furanyl, and indolyl rings.
Kyohei Yonekura, Mika Shinoda, Yuko Yonekura, Teruhisa Tsuchimoto   +3 more
doaj   +1 more source

Observation of beta decay of In-115 to the first excited level of Sn-115

, 2004
In the context of the LENS R&D solar neutrino project, the gamma spectrum of a sample of metallic indium was measured using a single experimental setup of 4 HP-Ge detectors located underground at the Gran Sasso National Laboratories (LNGS), Italy.
Ambrosio, Arnaboldi, Arpesella, Audi, Audi, Audi, Audi, Bahcall, Bahcall, Barabanov, Belli, Blachot, C.M. Cattadori, Cribier, Cribier, De Laeter, Douysset, Feinberg, Feldman, Firestone, Gove, Hagiwara, Klimenko, L. Pandola, Lobashev, M. De Deo, M. Laubenstein, Norman, Norman, Pfeiffer, Raghavan, Raghavan, Roy, Singh, Sisti, Sunyar, V.I. Tretyak, Vaidya   +37 more
core   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source

A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

Cumhuriyet Science Journal
This study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices.
Sezai Elagöz, Meryem Demir
doaj   +1 more source

Gas Sorption Properties of a New Three-Dimensional In-ABDC MOF With a Diamond Net

Frontiers in Materials, 2019
The pseudotetrahedral node, [In(O2CR)4]−, often found in InIII-based metal-organic frameworks (MOFs) without a cluster-based secondary building unit (SBU) is a negatively charged center due to charge mismatch between an 8-coordinate InIII ion and four ...
In-Hwan Choi, Suk Bin Yoon, So-Young Jang, Seong Huh, Sung-Jin Kim, Youngmee Kim   +5 more
doaj   +1 more source