Results 161 to 170 of about 8,754 (215)

Sputtered oxide/indium phosphide junctions and indium phosphide surfaces

Journal of Applied Physics, 1980
The reason that sputtered indium-tin oxide (ITO)/InP solar cells junctions with large lattice mismatch have the same efficiency as CdS/InP junctions with good lattice match is shown to be that sputtered ITO/InP junctions actually consist of n+-ITO/n-InP/p-InP buried homojunctions.
Ming-Jong Tsai, Alan L. Fahrenbruch, Richard H. Bube   +2 more
openaire   +1 more source

Indium Phosphide Photonic Integrated Circuits

Optical Fiber Communication Conference (OFC) 2020, 2020
Photonic integration is essential for high-performance communications and now becomes directly exploitable in sensing, metrology and imaging. InP PICs provide lasers, amplifiers, modulators and detectors in one platform, and a roadmap for higher density integration.
Smit, M. K., Williams, K. A.
openaire   +3 more sources

Indium Phosphide Membrane Photonics on Silicon

Optical Fiber Communication Conference (OFC) 2019, 2019
Energy-efficiency, bandwidth density and speed requirements drive miniaturisation in photonics and the intimate integration with silicon technologies. IMOS - the integration of InP membranes on silicon - is an active, scalable nanophotonic platform to achieve this.
Williams, K. A., Pogoretskiy, V., van Engelen, J. P., Kelly, N. P., van der Tol, J. J.G.M., Jiao, Y.   +5 more
openaire   +3 more sources

Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

Applied Physics Letters, 1980
We report the first systematic measurement of the electroreflectance spectra of InuGa1−uPvAs1−v over the range of compositions that lattice-match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ0, E1, E1+Δ1, Δ0, and Δ1.
Ernesto H. Perea, Emilio E. Mendez, Clifton G. Fonstad   +2 more
openaire   +1 more source

Indium phosphide junctions

Soviet Physics Journal, 1969
A method is given for obtaining p-n junctions by diffusing zinc or cadmium into InP. The current-voltage characteristics of such a p-n junction at room temperature are given.
S. G. Metreveli, R. M. Kundukhov
openaire   +1 more source

Electrodeposition of indium phosphide

Journal of Crystal Growth, 1981
Abstract The electrodeposition of indium phosphide films has been achieved using a solution of In 2 O 3 in a quaternary NaPO 3 /KPO 3 / NaF/KF eutectic. Stable growth of coherent layers on CdS and [111] and [100] InP requires a current density in the range 1–3 mA cm -2 .
D. Elwell, R.S. Feigelson, M.M. Simkins
openaire   +1 more source

The Mercury-Indium Phosphide Diode

Physica Status Solidi (a), 1980
Electrical characteristics are described for a contact made between mercury and n-type InP. Both capacitance-voltage and current-voltage measurements are made. The contact is found to be unstable, with both types of characteristics showing a steady drift with time, but the curves nevertheless follow ideal Schottky barrier theory closely over a wide ...
B. Tuck, B. R. Hayes-Gill
openaire   +2 more sources

MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM PHOSPHIDE

Journal of Crystal Growth, 1975
Oscillators with efficiencies over 20% at 15 GHz that have small temperature sensitivity, and transferred electron amplifiers that have less than 9 dB noise figures at 15 GHz have been made from epitaxial multilayers of indium phosphide. The techniques involved in growing and characterising these epitaxial layers are presented.
R.C. Clarke, L.L. Taylor
openaire   +1 more source

Bidirectional Growth of Indium Phosphide Nanowires

Nano Letters, 2012
We present a bidirectional growth mode of InP nanowires grown by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). We studied the effect of the supply ratio of DEZn ([DEZn]) on InP grown structure morphology and crystal structures during the SA-MOVPE.
Keitaro, Ikejiri, Fumiya, Ishizaka, Katsuhiro, Tomioka, Takashi, Fukui   +3 more
openaire   +2 more sources

Structural Transition in Indium Phosphide Nanowires

Nano Letters, 2010
We study the catalyst-free growth of InP nanowires using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and show that they undergo transition of crystal structures depending on the growth conditions. InP nanowires were grown on InP substrates where the mask for the template of the growth was defined.
Yusuke, Kitauchi, Yasunori, Kobayashi, Katsuhiro, Tomioka, Shinjiro, Hara, Kenji, Hiruma, Takashi, Fukui, Junichi, Motohisa   +6 more
openaire   +2 more sources