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Zone melting of indium phosphide
Journal of Electronic Materials, 1975Bulk indium phosphide crystals have been prepared by zone melting with dislocation densities 104 ≤ Nd ≤ 105 cm-2. The residual impurity level in nominally undoped crystals and the dopant distribution in Cd-, Sn- and Ge-doped zone melted ingots, as revealed by spark source mass spectrometric analyses, indicate a strong interaction between segregation at
K. J. Bachmann +4 more
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Dry Etching of Indium Phosphide
MRS Proceedings, 1992ABSTRACTIndium Phosphide (InP) based multilayer structures are becoming increasingly important in the semiconductor industry with optoelectronic applications being the main growth area. Mesa type structures with finely controlled width and etch angle, often form the building blocks for many of these photonic devices.
P. Bond +4 more
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1999
Indium phosphide (InP) and its related alloys InGaAs(P) have received much attention because of their wide use in the fabrication of laser diodes and detectors operating in the 1.3–1.7-μn wavelength region (see Ref. [1]). High-speed electronic devices, such as heterojunction bipolar transistors and high-electron mobility transistors are also being ...
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Indium phosphide (InP) and its related alloys InGaAs(P) have received much attention because of their wide use in the fabrication of laser diodes and detectors operating in the 1.3–1.7-μn wavelength region (see Ref. [1]). High-speed electronic devices, such as heterojunction bipolar transistors and high-electron mobility transistors are also being ...
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Indium phosphide particle detectors
IEEE Transactions on Nuclear Science, 1989The authors fabricated particle detectors made from InP:Fe, InP:Zn, and InP:Cu and evaluated the performance of these devices. The InP detectors were suggested for gamma-ray detection with varying degrees of success. Gamma-ray pulse-height spectra were acquired and stored for detectors of each type.
F. Olschner +3 more
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Dry etching of indium phosphide
Vacuum, 1986Abstract In contrast to other III–V materials such as gallium arsenide, it is difficult to dry-etch indium phosphide, particularly if it is desired to use organic mask materials which deform at relatively low temperatures. Argon ion beams usually sputter phosphorus preferentially, and the common reactive dry etchants which contain fluorine and ...
GF Doughty +3 more
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Implantation of dopants into indium phosphide
Journal of Applied Physics, 1985Seven donors (Si, S, Ge, Se, Sn, Te, and Pb) and nine acceptors (Be, Mg, Cr, Mn, Fe, Cu, Zn, Cd, and Hg) have been implanted into liquid-encapsulated Czochralski InP(Fe). For each dopant, the first four moments of the density profile have been extracted by fitting Pearson IV distributions to secondary ion mass spectrometry data.
Carl R. Zeisse +2 more
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Ohmic Contacts on Indium Phosphide
Physica Status Solidi (a), 1978G. Weimann, W. Schlapp
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2012
Multi-junction photovoltaic cell of III-V alloyed semiconductor material with high optical sensitivity and ideal combination of band-gaps promotes high photon absorption. Using multiband-gap system and splitting the solar spectrum towards matched spectral sensitivity we can get higher efficiency of the solar cell.
Barua, Soumen +4 more
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Multi-junction photovoltaic cell of III-V alloyed semiconductor material with high optical sensitivity and ideal combination of band-gaps promotes high photon absorption. Using multiband-gap system and splitting the solar spectrum towards matched spectral sensitivity we can get higher efficiency of the solar cell.
Barua, Soumen +4 more
openaire +1 more source