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Journal of Crystal Growth, 1983
Abstract Polycrystalline ingots of indium phosphide have been synthesized using the direct reaction technique. Indium phosphide has been grown under various phosphorus pressures (3 to 30 atm). Several temperature profiles were used to study the effect of temperature on mobility, carrier concentration, grain size, homogeneity, and stoichiometry ...
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Abstract Polycrystalline ingots of indium phosphide have been synthesized using the direct reaction technique. Indium phosphide has been grown under various phosphorus pressures (3 to 30 atm). Several temperature profiles were used to study the effect of temperature on mobility, carrier concentration, grain size, homogeneity, and stoichiometry ...
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Ion implantation in indium phosphide
Nuclear Instruments and Methods, 1981Abstract Carrier-concentration and mobility profiles of Zn- and Mg-implanted layers formed in Fe-doped semi-insulating InP have been investigated by successive Hall-effect and sheet-resistivity measurements followed by an anodic oxide growth and stripping process.
Taroh Inada, Shin-ichi Taka, Tohru Hara
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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362), 2003
High commercial interest in WDM and optical networking places strong emphasis on increased functionality from semiconductor optoelectronics technologies. This talk will examine the performance and cost issues of hybrid and monolithic integration technologies with examples drawn from current international research efforts.
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High commercial interest in WDM and optical networking places strong emphasis on increased functionality from semiconductor optoelectronics technologies. This talk will examine the performance and cost issues of hybrid and monolithic integration technologies with examples drawn from current international research efforts.
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The Preparation and Properties of Indium Phosphide
Russian Chemical Reviews, 1986The present review examines recent work on the synthesis of polycrystalline specimens of indium phosphide and the growth of single crystals of this compound for the modern electronics industry. The synthesis of polycrystalline indium phosphide by different methods is examined. Particular attention has been paid to work on the preparation of highly pure
V P Talyzin, A Ya Nashel'skii
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1999
Amorphous indium phosphide (a-InP) is normally prepared by flash-evaporating crystalline InP (see, e.g., Ref. [1]) or by evaporating the In-P components separately [2], but it can also be obtained by ion implantation [3]-which, in principle, yields a better-quality material with reproducible properties.
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Amorphous indium phosphide (a-InP) is normally prepared by flash-evaporating crystalline InP (see, e.g., Ref. [1]) or by evaporating the In-P components separately [2], but it can also be obtained by ion implantation [3]-which, in principle, yields a better-quality material with reproducible properties.
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Rapid synthesis of indium phosphide
Review of Scientific Instruments, 1985A method for the high-pressure synthesis (440 psi) of InP is investigated. Independent temperature control of a three-zone furnace incorporating a heat pipe provides a stable temperature profile throughout the synthesis cycle. Internal/external pressure control of the quartz ampoule is maintained by use of a water-cooled baffle and a temperature ...
Joseph A. Adamski, Brian S. Ahern
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Indium-Phosphide Photonic-Integrated-Circuits
Optical Fiber Communication Conference, 2017▸ 1970's — OEICs on GaAs for high-speed computing ▸ 1980's — InP photonics/fiber; integration & tunables for coherent → Reach ▸ 1990's — Widely-tunables, laser-mods, small-scale int. for WDM and cost ▸ 1990's — VCSELs for datacom and optical interconnection ▸ 2000 — Bubble: Explosion ofstrangeideas, bandwidth-demand satisfied by DWDM → crash; but ...
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The preparation and assessment of indium phosphide
Journal of Crystal Growth, 1983Abstract Polycrystalline ingots of indium phosphide with large grain size have been grown by horizontal directional freezing in an autoclave. The best products have carrier concentrations 15 cm -3 at room temperature, and mobilities ranging from 20,000–40,000 cm 2 V -1 s -1 at 77 K.
J.E. Wardill +5 more
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Indium Phosphide - Into The Future
SPIE Proceedings, 1989Major industry interest is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress.
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