Results 51 to 60 of about 7,681 (184)

The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

Crystals, 2017
To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molecular
Florent Ravaux, Irfan Saadat, Mustapha Jouiad   +2 more
doaj   +1 more source

Conjugated Inorganic–Organic Hybrid Polymers with p‐Block Elements

Angewandte Chemie International Edition, Volume 65, Issue 2, 9 January 2026.
The influence of various p‐block element motifs on the photophysical properties of conjugated inorganic‐organic hybrid polymers is surveyed regarding applications in organic electronics. Recent advances in the use of heavier elements as well as heavier multiple bonds and the development of diverse (post‐)functionalization strategies suggest ample scope
Anna‐Lena Thömmes, David Scheschkewitz   +1 more
wiley   +1 more source

Synthesis of Indium Nitride Epitaxial Layers on a Substrate of Porous Indium Phosphide [PDF]

Журнал нано- та електронної фізики, 2015
The paper presents a technique to obtain InN films on porous InP substrates by radical-beam gettering epitaxy. According to the results of the Auger spectroscopy, InN film thickness ranged from 100 nm to 0.5 microns depending on the etching conditions.
J.A. Suchikova
doaj  

Synthesis of Lewis Acid‐Base Adducts Between PCO− and Group 13 Lewis Acids

Zeitschrift für anorganische und allgemeine Chemie, Volume 652, Issue 1, January 6, 2026.
Lewis acid–base adducts [Na(18c6)(L)][PCO(EMe3)] (L = THF or 1,4‐dioxane; E = Ga, In) were obtained from the reactions of [Na(18c6)PCO] and trimethyltriels (EMe3 (E = Ga, In) and examined by NMR spectroscopy, IR spectroscopy, elemental analysis, and X‐ray structure analysis.
Kevin Dollberg, Stefan Seus, Maximilian Knieling, Franz Färber, Roman‐Malte Richter, Joel David Nitzsche, Katalin Mészáros, Sergei Ivlev, Florian Weigend, Carsten von Hänisch   +9 more
wiley   +1 more source

Inverse Design in Nanophotonics via Representation Learning

Advanced Optical Materials, Volume 14, Issue 1, 9 January 2026.
This review frames machine learning (ML) in nanophotonics through a classification based on where ML is applied. We categorize methods as either output‐side, which create differentiable surrogates for solving Maxwell's partial differential equations (PDEs), or input‐side, which learn compact representations of device geometry.
Reza Marzban, Ali Adibi, Raphaël Pestourie   +2 more
wiley   +1 more source

Methodology for Topological Interface Engineering in 2D Photonic Crystals

Advanced Photonics Research, Volume 7, Issue 1, January 2026.
This article introduces an automated framework for topological photonic crystal design. It features an iterative band connection method for identifying band crossings, a data‐driven approach for band symmetry recognition, and analysis of how topological mode dispersion trades off with photonic band‐gap size.
Ondřej Novák, Gervasi Herranz, Martin Veis   +2 more
wiley   +1 more source

Applications and challenges of silicon-based optoelectronics in communication

Dianxin kexue, 2021
Silicon-based optoelectronics technology has the advantages of photonics, such as broadband, high-speed and anti-interference, as well as the advantages of microelectronics, such as large-scale integration, low energy consumption and low cost.Silicon ...
Dezhao LI, Pengfei XU, Kejian ZHU, Zhiping ZHOU   +3 more
doaj   +2 more sources

High‐Performance Capacitive Sensor Based on Polyphosphazene‐Modified InP Electrodes for Hydroquinone Detection

Advanced Sensor Research, Volume 5, Issue 1, January 2026.
A high‐performance capacitive sensor based on polyphosphazene‐coated n‐InP electrodes (InP/PPP) enables highly sensitive hydroquinone detection. The InP/PPP interface, characterized by XPS and SEM analyses, provides a linear range of 1–100 µm with a detection limit of 0.73 µm.
Siwar Jebril, Gianluca Visagli, Muriel Bouttemy, Mathieu Fregnaux, Arnaud Etchberry, Anne‐Marie Goncalves   +5 more
wiley   +1 more source

Ultrafast Electron Dynamics at the Water‐Modified InP(100) Surface

Advanced Materials Interfaces
The interaction of water molecules with semiconductor surfaces is relevant to various optoelectronic phenomena and physicochemical processes. Despite advances in fundamental understanding of water‐exposed surfaces, the detailed time‐ and energy‐resolved ...
Jonathan Diederich, Agnieszka Paszuk, Isaac Azahel Ruiz Alvarado, Marvin Krenz, Mohammad Amin Zare Pour, Diwakar Suresh Babu, Jennifer Velazquez Rojas, Christian Höhn, Yuying Gao, Klaus Schwarzburg, David Ostheimer, Rainer Eichberger, Wolf Gero Schmidt, Thomas Hannappel, Roel van deKrol, Dennis Friedrich   +15 more
doaj   +1 more source

Controllable Charge Storability in InP/ZnSe Core/Shell Quantum Dots toward Bioinspired Optical Synaptic Application

Advanced Science, Volume 13, Issue 5, 27 January 2026.
A field‐effect transistor incorporating type‐I InP/ZnSe core–shell quantum dots demonstrates light‐ and gate‐tunable synaptic plasticity. By leveraging field‐assisted photoinduced charge trapping, the device emulates essential neuromorphic functions, including paired‐pulse facilitation, memory consolidation, and classical conditioning.
Guohao Wen, Bingbing Huo, Dingting Zheng, Xiang Zheng, Guanlin Ke, Zhiguo Chi, Honglei Wu, Botao Ji, Zhenhua Sun   +8 more
wiley   +1 more source