Results 51 to 60 of about 109,991 (250)

High-Power Indium Phosphide Photonic Integrated Circuits

open access: yesIEEE Journal of Selected Topics in Quantum Electronics, 2019
Indium phosphide (InP) is the most developed platform for photonic integrated circuits (PICs). Of interest is the advancement of this platform for applications that demand high performance, especially high output power, including free space ...
Hongwei Zhao   +6 more
semanticscholar   +1 more source

Indium Oxide Nanotubes Obtained by Radical Beam Epitaxy [PDF]

open access: yesЖурнал нано- та електронної фізики, 2015
We propose an original method for producing indium oxide nanotubes embedded in a porous InP surface. Annealing of porous InP samples obtained by electrochemical etching is performed in a flux of atomic oxygen.
V.V. Kidalov, А.F. Dyadenchuk
doaj  

InPact — the indium phosphide specialists

open access: yesIII-Vs Review, 1997
AbstractSince the management buy-out in 1995, InPact has changed dramatically and for the better. Sales have more than doubled, and the staff has grown from 11 to 25. Today, InPact claims to be the leading sourcer of INP wafers outside Japan. We owe this growing success to the customers world-wide — who have been steadily putting more trust into our ...
openaire   +2 more sources

Monolithic Integrated Chip With SOA and Tunable DI for Multichannel All-Optical Signal Processing

open access: yesIEEE Photonics Journal, 2018
An indium phosphide-based monolithic integrated chip with semiconductor optical amplifiers and a tunable delay interferometer (DI) is developed. Because of the comb filtering characteristics of DI, this chip has the potential to be used for multichannel ...
Zhuyang Huang   +4 more
doaj   +1 more source

The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

open access: yesCrystals, 2017
To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molecular
Florent Ravaux   +2 more
doaj   +1 more source

Synthesis of super bright indium phosphide colloidal quantum dots through thermal diffusion

open access: yesCommunications Chemistry, 2019
Indium phosphide based quantum dots have emerged in recent years as alternatives to traditional heavy metal (cadmium, lead) based materials suitable for biomedical application due to their non-toxic nature. The major barrier to this application, is their
Mitchell Clarke   +9 more
semanticscholar   +1 more source

Applications and challenges of silicon-based optoelectronics in communication

open access: yesDianxin kexue, 2021
Silicon-based optoelectronics technology has the advantages of photonics, such as broadband, high-speed and anti-interference, as well as the advantages of microelectronics, such as large-scale integration, low energy consumption and low cost.Silicon ...
Dezhao LI   +3 more
doaj   +2 more sources

Synthesis of Indium Nitride Epitaxial Layers on a Substrate of Porous Indium Phosphide [PDF]

open access: yesЖурнал нано- та електронної фізики, 2015
The paper presents a technique to obtain InN films on porous InP substrates by radical-beam gettering epitaxy. According to the results of the Auger spectroscopy, InN film thickness ranged from 100 nm to 0.5 microns depending on the etching conditions.
J.A. Suchikova
doaj  

Interlayer doping with p-type dopant for charge balance in indium phosphide (InP)-based quantum dot light-emitting diodes.

open access: yesOptics Express, 2019
A 2,3,4,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4-TCNQ) doping interlayer was developed to improve charge imbalance and the efficiency in indium phosphide (InP)-based quantum dot light-emitting diodes (QLEDs).
Hyejin Kim   +5 more
semanticscholar   +1 more source

Integrated polarisation handling devices

open access: yesIET Optoelectronics, 2020
Photonic integrated circuits (PICs) suffer from birefringence due to high‐index contrast. Polarisation handling devices improve the performance of the PICs by reducing the polarisation‐dependent dispersion and loss.
Md Ghulam Saber   +12 more
doaj   +1 more source

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