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Precipitation effects in indium-doped zinc selenide
Physica Status Solidi (a), 1981Single crystals of zinc selenide are grown containing indium in concentrations ranging from 5 to 1000 ppm, using a vapour phase technique. Solubility of the indium in the zinc selenide is complete under the growth conditions employed. Examination of chemically thinned samples of such crystals in the transmission electron microscope shows that the only ...
G. J. Russell, B. Vincent, J. Woods
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Chemical vapor deposition of Gallium selenide and indium selenide nanoparticles
Chemical Vapor Deposition, 1996Nanometer‐sized structures can exhibit quite different properties from those of their macroscopic forms. In this paper is is reported that, under suitable conditions, well‐defined nanoparticles of InSe and GaSe may be obtained from the vapor phase thermolysis of heterocubane molecules.
Sarah L. Stoll +2 more
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Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances
Small, 2014Indium selenides have attracted extensive attention in high‐efficiency thermoelectrics for waste heat energy conversion due to their extraordinary and tunable electrical and thermal properties. This Review aims to provide a thorough summary of the structural characteristics (e.g.
Han, Guang +3 more
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Exciton–exciton annihilation in thin indium selenide layers
The Journal of Chemical Physics, 2022The photocarrier recombination in van der Waals layers may determine the device performance based on these materials. Here, we investigated the photocarrier dynamics in a multilayer indium selenide nanofilm using transient absorption spectroscopy. The sub-bandgap transient absorption feature was attributed to the indirect intraband absorption of the ...
Zhangqiang Yang +6 more
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Chemischer Informationsdienst, 1980
AbstractDie neuen isotypen Titelverbindungen (Fddd, Z=32) werden aus einem stöchiometrischen Gemenge der Elemente bzw. aus SrInZ und Se unter Ar in Korundtiegeln (1.
W. KLEE, H. SCHAEFER
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AbstractDie neuen isotypen Titelverbindungen (Fddd, Z=32) werden aus einem stöchiometrischen Gemenge der Elemente bzw. aus SrInZ und Se unter Ar in Korundtiegeln (1.
W. KLEE, H. SCHAEFER
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1981
Indium selenide photovoltaic devices are described. Transport and photovoltaic properties are discussed. Efficiencies of 6% are reported and ways of improvement are proposed.
A. Segura +3 more
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Indium selenide photovoltaic devices are described. Transport and photovoltaic properties are discussed. Efficiencies of 6% are reported and ways of improvement are proposed.
A. Segura +3 more
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The band structures of gallium and indium selenide
Journal of Physics C: Solid State Physics, 1977The band structures of the group III-VI monochalcogenides GaSe and InSe have been calculated using a semi-empirical tight-binding method in a two-dimensional approximation. Many of the discrepancies between experimental work and previous calculations for GaSe have been resolved. The results for InSe appear for the first time.
McCanny, J.V., Murray, R.B.
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Excitonic absorption edge of indium selenide
Physical Review B, 1978We report an investigation of the fundamental absorption edge of InSe under high-resolution conditions. We resolve three components of the direct exciton series and obtain an effective Rydberg energy of 14.5 meV. From this value an effective mass ($m=0.10 {m}_{0}$) of electrons in the $\ensuremath{\Gamma}$ minimum of the conduction band is obtained. We
J. Camassel +3 more
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Electrical and Optical Properties of Indium Selenide
Physical Review, 1954The electrical and optical properties of InSe have been investigated with single crystals of the compound. The spectral dependence of the optical absorption coefficient and of the photoconductivity was measured. The optical absorption edge was not sufficiently well defined for the band gap to be estimated unambiguously. The photoconductive response was
R. W. Damon, R. W. Redington
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Positron lifetime experiments in indium selenide
Journal of Physics C: Solid State Physics, 1988Positron lifetime experiments have been performed on as-grown samples which had been isochronally annealed up to 820 K and plastically deformed and these experiments yield a constant lifetime of 282+or-2 ps which is attributed to bulk positron states in InSe.
R M de la Cruz +3 more
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