Results 161 to 170 of about 75,635 (199)

Electrical and Optical Properties of Indium Selenide

Physical Review, 1954
The electrical and optical properties of InSe have been investigated with single crystals of the compound. The spectral dependence of the optical absorption coefficient and of the photoconductivity was measured. The optical absorption edge was not sufficiently well defined for the band gap to be estimated unambiguously. The photoconductive response was
R. W. Damon, R. W. Redington
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Positron lifetime experiments in indium selenide

Journal of Physics C: Solid State Physics, 1988
Positron lifetime experiments have been performed on as-grown samples which had been isochronally annealed up to 820 K and plastically deformed and these experiments yield a constant lifetime of 282+or-2 ps which is attributed to bulk positron states in InSe.
R M de la Cruz, R Pareja, A Segura, A Chevy   +3 more
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Far-infrared spectra of indium selenide single crystals

Physical Review B, 1992
Far-infrared spectra of different indium selenide compounds are reported. Both polarizations E\ensuremath{\perp}c and E\ensuremath{\parallel}c have been recorded in the layered materials InSe,${\mathrm{In}}_{2}$${\mathrm{Se}}_{3}$, ${\mathrm{In}}_{4}$${\mathrm{Se}}_{3}$, and ${\mathrm{InSe}}_{1.2}$ crystals.
, Julien, , Eddrief, , Balkanski, , Chevy   +3 more
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Free Carrier Absorption in n-Type Indium Selenide

physica status solidi (b), 1985
AbstractInfrared absorption of n‐type indium selenide is studied in the 2.5 to 50 μm spectral range at 300 °K. Lattice absorption peaks are observed between 25 and 50 μm. Tin‐doped samples with an electron concentration higher than 1016 cm−3 exhibit free carrier absorption for λ larger than 10 μm. The experimental results are interpreted by the quantum
B. Mari, A. Segura, A. Chevy
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Indium selenide film formation by the double-source evaporation of indium and selenium

Thin Solid Films, 1987
Abstract Films of γ-In2Se3 are easily obtained by the evaporation of indium and selenium with the supply ratio R = [Se]/[In] above 1.7 and the substrate temperature Ts above 170°C. InSe films are obtained when R ≈ 1.2 and Ts > 100°C. The electrical conductivities of γ-In2Se3 and InSe films are about 10−10−10−7 and 10−6 S cm−1 respectively.
M. Yudasaka, T. Matsuoka, K. Nakanishi
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Photoemission spectra of indium selenide

2017
For layered InSe crystals photoluminescence spectra were investigated and the corresponding radiative transitions were analyzed. It was found that along with the band-to-band transitions the radiative ones with participation of impurity levels plays a substantial role in the light emission spectrum of the semiconductor.
Katerynchuk, V.M., Kovalyuk, M.Z., Tovarnitskii, M.V.   +2 more
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Optical investigations of the indium selenide glasses

Vacuum, 2003
Abstract Binary alloys of InxSe100−x (with x=7,12,17 and 22) were synthesized by mechanical alloying technique (MA). Then thin films of 200 nm in thickness were prepared by thermal evaporation technique under vacuum of 2×10 −5 Torr .
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Stimulated photoluminescence in indium selenide

Physical Review B, 1982
CINGOLANI A, FERRARA M, LÉVY F., LUGARA', Pietro Mario   +3 more
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Segregation of Silicon in Indium Selenide

Physica Status Solidi (a), 1992
J. Riera, A. Segura, A. Chevy
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Heat Conductivity of Indium Selenide

physica status solidi (b), 1968
S. M. Atakishiev, D. Sh. Abdinov, G. A. Akhundov   +2 more
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