Results 31 to 40 of about 75,635 (199)

Indium selenide nanowire phase-change memory [PDF]

, 2007
Nonvolatile memory device using indium selenide nanowire as programmable resistive element was fabricated and its resistive switching property was studied as functions of electrical pulse width and voltage magnitude. The nanowire memory can be repeatedly
Nguyen, Thuc D, Janes, David B, Yu, Bin, Ng, Garrick, Ju, Sanghyun, Sun, Xuhui, Meyyappan, M   +6 more
core   +2 more sources

Indium tin oxide overlayered waveguides for sensor applications [PDF]

, 1997
The use of indium tin oxide (ITO) thin films as electrodes for integrated optical electrochemical sensor devices is discussed. The effect of various thicknesses of ITO overlayers exhibiting low resistivity and high transparency on potassium ion-exchanged
Wilkinson, James S., LUFF J. B., Perrone, Guido, Wilkinson, J.S., Luff, B.Jonathan, WILKINSON J. S., Luff, J.B.   +6 more
core   +1 more source

Electron Paramagnetic Resonance Study of PbSe, PbTe, and PbTe:In Semiconductors Obtained by the Pulsed Laser Deposition Method

Molecules, 2022
The magnetic properties of lead selenide (PbSe) and indium-doped lead telluride (PbTe:In) composites have been studied by using the electron paramagnetic resonance (EPR) technique.
Aleksandra Wędrychowicz, Bogumił Cieniek, Ireneusz Stefaniuk, Ihor Virt, Romana Śliwa   +4 more
doaj   +1 more source

Photoconductivity and photovoltaic effect in indium selenide [PDF]

Journal of Applied Physics, 1983
Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures.
Segura García del Río, Alfredo, Guesdon, J.P., Besson, J.M., Chevy, A.   +3 more
openaire   +2 more sources

Structural modification and band-gap crossover in indium selenide nanosheets† [PDF]

RSC Advances, 2016
Herein, we report on the synthesis of InSe nanosheets. We further report on the interdependency of concentration and time on the evolution of the nanosheets as well as the role of the capping agents on the crystal phase and morphology of the resultant ...
Mildred A. Airo, Siziwe Gqoba, Francis Otieno, Makwena J. Moloto, Nosipho Moloto   +4 more
doaj   +1 more source

Computational Investigation Of Zn-based Single Buffer Layers Toward Cd-free High-efficiency CIGS Thin Film Solar Cells

Journal of Applied Science and Engineering, 2023
The photovoltaic performance of copper indium gallium diselenide (CIGS)-based solar cells with Cd-free single buffer layers and a barium disulfide (BaSi2) back-surface field (BSF) has been studied through a numerical approach using a one-dimensional ...
Md. Mahabub Alam Moon, Sayed Rezwanul Islam Biplab, Md. Hasan Ali, Md. Ferdous Rahman, Md. Sohel Rana, Abdul Kuddus   +5 more
doaj   +1 more source

Effects of sputtering pressure and annealing temperature on the characteristics of indium selenide thin films

Materials Research Express, 2023
Indium selenide is a significant two-dimensional lamellar semiconductor with excellent physical properties whose enormous potential utilization in optoelectronic devices has been practically hindered by the lack of suitable thin film deposition ...
Xinfeng Zhu, Xuechao Liu, Quan Zheng, Hao Wang, Minghui Zhang, Xiuhong Pan, Meibo Tang, Min Jin   +7 more
doaj   +1 more source

Ferroelectricity in Two Dimensional Indium(III) Selenide: Coupled In-Plane and Out-of-Plane Polarization for Next-Generation Electronics

Engineered Science
Ferroelectric memory has emerged as a promising candidate for next-generation non-volatile memory, owing to its low power consumption, rapid switching speeds, and high endurance.
Muhammad Faizan, Jinshun Bi, Xuefei Liu, Jinbo Pang, Mingqiang Liu, Sania Niaz, Ghulam Abbas Khan, Abuduwayiti Aierken, Changsong Gao, Degui Wang, Gang Wang, Yan Wu   +11 more
doaj   +1 more source

Layered Indium Selenide under High Pressure: A Review

Crystals, 2018
This paper intends a short review of the research work done on the structural and electronic properties of layered Indium Selenide (InSe) and related III–VI semiconductors under high pressure conditions.
Alfredo Segura
doaj   +1 more source

Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals

AIP Advances, 2014
The impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals with four and five different doping concentrations, respectively, has been studied in comparison with that of undoped GaSe.
Z.-S. Feng, Z.-H. Kang, X.-M. Li, Zeng-Bin Wang, J.-Y. Gao, Yu. M. Andreev, V. V. Atuchin, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, V. A. Svetlichnyi   +11 more
doaj   +1 more source