Results 21 to 30 of about 1,141 (210)
Light: Science & Applications, 2021 A high-accuracy source-independent radiometric calibration (SIRC) methodology with low complexity for both photoconductive and photovoltaic infrared photonic sensors is proposed to provide an easier SI-traceable way for global observation systems.
Qiang Guo +6 more
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Advances in Mid-Infrared Single-Photon Detection
Photonics, 2022 The current state of the art of single-photon detectors operating in the mid-infrared wavelength range is reported in this review. These devices are essential for a wide range of applications, such as mid-infrared quantum communications, sensing, and ...
Stefano Dello Russo +6 more
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Graphene-Coated Nanowire Waveguides and Their Applications
Nanomaterials, 2020 In recent years, graphene-coated nanowires (GCNWs) have attracted considerable research interest due to the unprecedented optical properties of graphene in terahertz (THz) and mid-infrared bands.
Da Teng, Kai Wang, Zhe Li
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Infrared Photodetection from 2D/3D van der Waals Heterostructures
Nanomaterials, 2023 An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and ...
Qianying Tang +12 more
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GaN/AlN Multi-Quantum Wells Infrared Detector with Short-Wave Infrared Response at Room Temperature
Sensors, 2022 GaN-based quantum well infrared detectors can make up for the weakness of GaAs-based quantum well infrared detectors for short-wave infrared detection.
Fengqiu Jiang, Yuyu Bu
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Metals, 2018 Dissimilar metal joining between titanium and kovar alloys was conducted using electron beam welding. Metallurgical bonding of titanium alloys and kovar alloys was achieved by using a Cu/Nb multi-interlayer.
Defeng Mo +4 more
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AIP Advances, 2018 The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation ...
Bin Zhang +5 more
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Optical Properties of Type-Ⅱ InAs/GaSb Superlattices for Wide Band Infrared Detection [PDF]
Hangkong bingqi, 2021 InAs/GaSb type-Ⅱ superlattices (T2SLs) are considered as high-quality material for the third-generation infrared detectors due to the special energy band structure and mature material growth technology.
Li Hongkai, Li Mo, Dong Shangwei, Hong Jin, Chen Ye, Jing Chengbin, Yue Fangyu, Chu Junhao
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AIP Advances, 2020 The capacitance–voltage characteristics of metal–insulator–semiconductor structures based on Hg1−xCdxTe (x = 0.218) with CdTe passivation are studied before and after the passivation annealing process.
Xi Wang +13 more
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2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT
AIP Advances, 2014 We fabricate 2.6 μm InGaAs photodetectors by MBE technology and study its dark current mechanisms. Deep-level transient spectroscopy (DLTS) demonstrates a deep-level trap located at Ec - 0.25 eV in the absorption layer.
Xiaoli Ji +8 more
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