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InSe

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Heterojunction on the basis of FeIn₂Se₄ crystal obtained by the Bridgman method

Технологія та конструювання в електронній апаратурі, 2007
FeIn2Se4 crystals with a layered structure and magnetic component were grown by the Bridgman method. Heterojunctions of type n-InSe–p-FeIn₂Se₄ were fabricated.
Z. D. Kovalyuk, V. M. Katerynchuk, V. V. Netyaga, V. A. Zaslonkin   +3 more
doaj  

Hybrid density functional study of strain-engineered III-V semiconductors and monolayer InSe. [PDF]

RSC Adv
Ahmed MT, Sabah M, Islam MS, Shanta MR, Rahman MH, Ali MA, Parvin R, Naqib SH, Ali MS.   +8 more
europepmc   +1 more source

Two-Dimensional Indium Selenide for Next-Generation Electronics. [PDF]

Int J Mol Sci
Lee D.
europepmc   +1 more source

Suppressing Intrinsic Defects via Ag Doping Enables High-Performance InSe Field-Effect Transistors. [PDF]

Small Methods
Wang Z, Zhang Z, Ji H, Li H, Wang Z, Liu S, Chen J, Chen X, Sun M, Ren TL, Jin M, Zhang Y, Han L.   +12 more
europepmc   +1 more source

InSe-Enabled Wearable Triboelectric Nanogenerator for Biomechanical Energy Harvesting and Motion Sensing. [PDF]

ChemistryOpen
Wang S, Huang Y.
europepmc   +1 more source

Cavity-Defined van der Waals Plasmonic Nanolasers Enabled by Out-Of-Plane Dipole Coupling. [PDF]

Adv Mater
Liu Y, Liao X, Sun X, Yi X, Wu J, Li Y, Chen S, Pan A.   +7 more
europepmc   +1 more source

Probing the Optical Properties of Size-Selected Liquid-Phase Exfoliated γ-Indium Selenide. [PDF]

Nanomaterials (Basel)
Kochiev M, Ahmad M, Synnatschke KR, Steffens S, Nowack T, Sofer Z, Backes C, Benyoucef M.   +7 more
europepmc   +1 more source

On-chip quadratically nonlinear photodetector. [PDF]

Nat Commun
Zhang Y, Chen X, Zhang M, Zhang Y, Zhao C, Fang L, Zhao J, Gan X.   +7 more
europepmc   +1 more source

Lattice-Mismatched van der Waals Epitaxy and Photoluminescence of Two-Dimensional Ga _<i>x</i> In_1-<i>x</i> Se Alloys on Si(111). [PDF]

Cryst Growth Des
Muzzillo CP, McMahon WE, Zakutayev A, Norman AG.   +3 more
europepmc   +1 more source