Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe
n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured,
Sydor, O.M. +2 more
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Dynamic Control of Band Alignment and Built-In Potential in High Performance Self-Powered InSe/SnS<sub>2</sub> Van der Waals Photodetectors via Gas Molecular Physisorption. [PDF]
Cao Z +6 more
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Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications. [PDF]
Ahmad MA +3 more
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Low Temperature MOCVD Synthesis of High-Mobility 2D InSe. [PDF]
Günkel R +17 more
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Enhancing the Power Output of InSe-Based Screen-Printed Flexible Thermoelectric Generators through a Bi-Te-Co-Doping Strategy. [PDF]
Shankar MR, Prabhu AN, Nayak R.
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Two-dimensional magnetic tunnel p-n junctions for low-power electronics. [PDF]
Zhu W +15 more
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An Artificial Synaptic Device Based on InSe/Charge Trapping Layer/h-BN Heterojunction with Controllable Charge Trapping via Oxygen Plasma Treatment. [PDF]
Wang Q, Wang J, Lu M, Ma T, Li J.
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Observation of giant dipole moments of interlayer excitons via layer engineering. [PDF]
Zhu J, Liang T, Shen F, Chen Z, Xu J.
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Real-space observation of a time-reversal invariant topological state in twisted bilayer InSe. [PDF]
Tian D +10 more
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Blogs, genes and immigration: Online media and minimal politics
Böhmig, Inse +3 more
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