Results 121 to 130 of about 5,461 (227)

Microgravity-activated high-performance van der Waals InSe ferroelectric semiconductor. [PDF]

Nat Commun
Jin R, Sui F, Yu Y, Liu B, Jin M, Liu X, Dai J, Zheng Y, Jia S, Qi R, Yue F, Chu J.   +11 more
europepmc   +1 more source

Dynamic Control of Band Alignment and Built-In Potential in High Performance Self-Powered InSe/SnS₂ Van der Waals Photodetectors via Gas Molecular Physisorption. [PDF]

Small Sci
Cao Z, Abid M, Ó Coileáin C, An F, Chang CR, Wu YR, Wu HC.   +6 more
europepmc   +1 more source

Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications. [PDF]

Sci Rep
Ahmad MA, Imam M, Mech BC, Sreenivasulu VB.   +3 more
europepmc   +1 more source

Low Temperature MOCVD Synthesis of High-Mobility 2D InSe. [PDF]

Small
Günkel R, Maßmeyer O, Stein M, Bräumer K, Rodriguez RS, Anders D, Littmann JH, Anhäuser S, Ojaghi Dogahe B, Bergmann M, Solanki M, Langlotz NF, Glowatzki J, Belz J, Beyer A, Witte G, Chatterjee S, Volz K.   +17 more
europepmc   +1 more source

Enhancing the Power Output of InSe-Based Screen-Printed Flexible Thermoelectric Generators through a Bi-Te-Co-Doping Strategy. [PDF]

ACS Omega
Shankar MR, Prabhu AN, Nayak R.
europepmc   +1 more source

Two-dimensional magnetic tunnel p-n junctions for low-power electronics. [PDF]

Nat Commun
Zhu W, Wang Z, Hu T, Kudrynskyi ZR, Zhou T, Kovalyuk ZD, Hu C, Lin H, Li X, Deng Y, Lv Q, Zhao L, Patanè A, Žutić I, Zheng H, Wang K.   +15 more
europepmc   +1 more source

An Artificial Synaptic Device Based on InSe/Charge Trapping Layer/h-BN Heterojunction with Controllable Charge Trapping via Oxygen Plasma Treatment. [PDF]

Micromachines (Basel)
Wang Q, Wang J, Lu M, Ma T, Li J.
europepmc   +1 more source

Observation of giant dipole moments of interlayer excitons via layer engineering. [PDF]

Nat Commun
Zhu J, Liang T, Shen F, Chen Z, Xu J.
europepmc   +1 more source

Real-space observation of a time-reversal invariant topological state in twisted bilayer InSe. [PDF]

Nat Commun
Tian D, Tao S, Wang Y, Cheng P, Zhang Y, Wu K, Zhang Z, Yang SA, Feng B, Lu Y, Chen L.   +10 more
europepmc   +1 more source

<i>Ab initio</i> quantum transport investigation of Sub-3 nm β-InSe transistors for future high-performance nanoelectronics. [PDF]

RSC Adv
Ghafoor M, Khan R, Din SU, Safeen A, Li Q, Yang X, Yang Z, Lu J.   +7 more
europepmc   +1 more source