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Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe

open access: yes, 2012
n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured,
Sydor, O.M.   +2 more
core  

Low Temperature MOCVD Synthesis of High-Mobility 2D InSe. [PDF]

open access: yesSmall
Günkel R   +17 more
europepmc   +1 more source

Two-dimensional magnetic tunnel p-n junctions for low-power electronics. [PDF]

open access: yesNat Commun
Zhu W   +15 more
europepmc   +1 more source

Real-space observation of a time-reversal invariant topological state in twisted bilayer InSe. [PDF]

open access: yesNat Commun
Tian D   +10 more
europepmc   +1 more source

Blogs, genes and immigration: Online media and minimal politics

open access: yes, 2012
Böhmig, Inse   +3 more
core   +1 more source

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