Results 111 to 120 of about 5,450 (225)

Gort Inse Guaire

, 1937
Supported by funding from the Department of Arts, Heritage and the Gaeltacht (Ireland), University College Dublin, and the National Folklore Foundation (Fondúireacht Bhéaloideas Éireann), 2014-2016.
Gort Inse Guaire, Éanacháin, P. Ó H
openaire   +1 more source

Calculation of the band structure and its parameters for 2D indium monoselenide

Хімія, фізика та технологія поверхні
InSe as a 2D structure possesses carrier mobility and adaptive band gap at the level of the best nanoelectronic materials. Structurally the crystal is layered — it contains monolayers, each consisting of four monoatomic sheets in the sequence Se-In-In ...
О.Я. Тузяк, В.І. Дзюба, П.В. Галій, Т.М. Ненчук   +3 more
doaj   +1 more source

Optical Characterization of the Mgo/Inse Interface

, 2015
Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166In this work, a 500nm thick MgO layer deposited on the physically evaporated amorphous InSe thin film substrate is designed as a window for the MgO/InSe terahertz resonators.
Elsayed, Khaled A., Kayed, T. S., Qasrawı, Atef Fayez Hasan, Kayed, Tarek Said, Qasrawi, A. F.   +4 more
core   +1 more source

Influence of γ-radiation on electrical parameters InSe-heterostructures

, 2005
Исследования гетероструктур p-n-InSe и окисел-p-InSe после облучения в дозах 10-300 Р показали, что InSe-диоды отвечают требованиям радиационной ...
Политанская, О.А., Катеринчук, В.Н., Ковалюк, З.Д., Сидор, О.Н.   +3 more
core   +1 more source

Електричні властивості та фотовідгук гетеропереходу NiFe2O4/InSe

Досліджені умови нанесення методом спрей-піролізу при температурі 623 К тонких напівпровідникових феритових плівок n-NiFe2O4 на підкладки з кристалічного шаруватого напівпровідника nInSe для створення фоточутливих гетероперехолів n-NiFe2O4/n-InSe.
Orletskii, I.G., Tovarnitskii, M.V., Kushnir, B.V., Kovalyuk, Z.D., Ivanov, V.I., Tkachuk, I.G.   +5 more
core   +1 more source

Defect Engineering via Vacuum Annealing: Precise Selenium Vacancy Control for High‐Performance InSe Photodetectors

Advanced Electronic Materials
Few‐layer indium selenide (InSe) holds promise for next‐generation optoelectronics but suffers from defect‐related limitations. While thermal annealing is a common post‐synthesis technique for tuning the properties of 2D materials, its application in ...
Yi Liu, Xinlei Zhang, Wan Qu, Dan Zheng, Zhengyi Sun, Zhuochen Cai, Shixuan Guo, He Huang, Tao Wang, Qinghua Zhao   +9 more
doaj   +1 more source

Study of the photoelectric properties of the symmetric heterostructure “oxide–InSe–oxide”

Технологія та конструювання в електронній апаратурі, 2005
The possibility of fabricating an n–p–n type phototransistor based on a double heterostructure “oxide–InSe–oxide” is demonstrated. Photocurrent amplification in the phototransistor occurs only for initial sample thicknesses comparable to the diffusion ...
Z. D. Kovalyuk, V. M. Katerynchuk, O. N. Sydor   +2 more
doaj  

InSe

Yüksek ...
openaire   +1 more source

Semiconductor heterojunctions of oxide-InSe(GaSe) for photoelectric analyzers of polarized radiation

Технологія та конструювання в електронній апаратурі, 2004
The phenomenon of photopleochroism in oxide–p-InSe and n+-In₂O₃–p-GaSe heterojunctions was investigated over a wide spectral range. Maximum values of the photopleochroism coefficient (reaching 65% in In₂O₃-GaSe and — 40%) were obtained for the edge ...
Z. D. Kovalyuk, V. M. Katerynchuk
doaj  

Microgravity-activated high-performance van der Waals InSe ferroelectric semiconductor. [PDF]

Nat Commun
Jin R, Sui F, Yu Y, Liu B, Jin M, Liu X, Dai J, Zheng Y, Jia S, Qi R, Yue F, Chu J.   +11 more
europepmc   +1 more source