Results 111 to 120 of about 7,711 (227)

Effective mass calculation for InSe, InSe : Hoo(0.0025), InSe : Ho-0.025, InSe : Ho-0.005 and InSe : Ho0.05 samples using the external electric field shifting

, 2004
Undoped InSe and Ho doped InSe single crystals were grown by Bridgman-Stockberger method. The InSe crystals both undoped and doped with different ratios of (InSe:Ho-0.0025, InSe:Ho-0.0125 and InSe:Ho-0.005 and InSe:Hoo.05) had, no cracks or voids on the ...
Ates, A
core  

Heterostructures obtained by annealing InSe single crystals in sulfur vapors

Технологія та конструювання в електронній апаратурі, 2009
It has been established that during prolonged (120 h) thermal treatment of InSe single crystals in sulfur vapors, an InS/InSe heterostructure is formed.
Z. D. Kovalyuk, O. I. Kushnir, O. M. Sidor, V. V. Netyaga   +3 more
doaj  

InSe ince filmlerin ve InSe ince film aygıtların elde edilmesi ve incelenmesi

, 1998
TÜBİTAK TBAG28.02.1998Bu projenin öncelikli amacı vakumda cam tabanlar üzerine büyütülen InSe ince filmlerin elektrik, optik ve yapı özelliklerinin incelenerek depozisyon parametrelerinin ve filmlere uygulanan bazı film büyütme sonrası işlemlerin ...
Günal, İbrahim, Özkan, Hüsnü, Allakhverdıev, Kerim, Erçelebi, Ayşe Çiğdem, Gasanly, Nizami, Parlak, Mehmet   +5 more
core  

Properties of Se/Inse Thin-Film Interface

, 2016
Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166Se, InSe, and Se/InSe thin films have been prepared by the physical vapor deposition technique at pressure of similar to 10(-5) torr.
Elsayed, Khaled A., Qasrawı, Atef Fayez Hasan, Kayed, T. S., Kayed, Tarek Said, Qasrawi, A. F.   +4 more
core   +1 more source

Calculation of the band structure and its parameters for 2D indium monoselenide

Хімія, фізика та технологія поверхні
InSe as a 2D structure possesses carrier mobility and adaptive band gap at the level of the best nanoelectronic materials. Structurally the crystal is layered — it contains monolayers, each consisting of four monoatomic sheets in the sequence Se-In-In ...
О.Я. Тузяк, В.І. Дзюба, П.В. Галій, Т.М. Ненчук   +3 more
doaj   +1 more source

Gort Inse Guaire

, 1937
Supported by funding from the Department of Arts, Heritage and the Gaeltacht (Ireland), University College Dublin, and the National Folklore Foundation (Fondúireacht Bhéaloideas Éireann), 2014-2016.
Gort Inse Guaire, Éanacháin, P. Ó H
openaire   +1 more source

Електричні властивості та фотовідгук гетеропереходу NiFe2O4/InSe

Досліджені умови нанесення методом спрей-піролізу при температурі 623 К тонких напівпровідникових феритових плівок n-NiFe2O4 на підкладки з кристалічного шаруватого напівпровідника nInSe для створення фоточутливих гетероперехолів n-NiFe2O4/n-InSe.
Orletskii, I.G., Tovarnitskii, M.V., Kushnir, B.V., Kovalyuk, Z.D., Ivanov, V.I., Tkachuk, I.G.   +5 more
core   +1 more source

Defect Engineering via Vacuum Annealing: Precise Selenium Vacancy Control for High‐Performance InSe Photodetectors

Advanced Electronic Materials
Few‐layer indium selenide (InSe) holds promise for next‐generation optoelectronics but suffers from defect‐related limitations. While thermal annealing is a common post‐synthesis technique for tuning the properties of 2D materials, its application in ...
Yi Liu, Xinlei Zhang, Wan Qu, Dan Zheng, Zhengyi Sun, Zhuochen Cai, Shixuan Guo, He Huang, Tao Wang, Qinghua Zhao   +9 more
doaj   +1 more source

Influence of γ-radiation on electrical parameters InSe-heterostructures

, 2005
Исследования гетероструктур p-n-InSe и окисел-p-InSe после облучения в дозах 10-300 Р показали, что InSe-диоды отвечают требованиям радиационной ...
Политанская, О.А., Катеринчук, В.Н., Ковалюк, З.Д., Сидор, О.Н.   +3 more
core   +1 more source

Issue Information

InfoMat, Volume 8, Issue 9, September 2026.
wiley   +1 more source