Results 111 to 120 of about 5,461 (227)

Monolayer indium selenide: an indirect bandgap material exhibits efficient brightening of dark excitons

npj 2D Materials and Applications
Atomically thin indium selenide (InSe) exhibits a sombrero-like valence band, leading to distinctive excitonic behaviors. It is known that the indirect band gap of atomically thin InSe leads to a weak emission from the lowest-energy excitonic state (A ...
Naomi Tabudlong Paylaga, Chang-Ti Chou, Chia-Chun Lin, Takashi Taniguchi, Kenji Watanabe, Raman Sankar, Yang-hao Chan, Shao-Yu Chen, Wei-Hua Wang   +8 more
doaj   +1 more source

Adsorption and Sensing Properties of Ni-Modified InSe Monolayer Towards Toxic Gases: A DFT Study

Chemosensors
The emission of toxic gases from industrial production has intensified issues related to atmospheric pollution and human health. Consequently, the effective real-time monitoring and removal of these harmful gases have emerged as significant challenges ...
Jianhong Dong, Xiaoqian Qiu, Shuying Huang, Shaomin Lin, Lisha Liu, Huihui Xiong   +5 more
doaj   +1 more source

Heterostructures obtained by annealing InSe single crystals in sulfur vapors

Технологія та конструювання в електронній апаратурі, 2009
It has been established that during prolonged (120 h) thermal treatment of InSe single crystals in sulfur vapors, an InS/InSe heterostructure is formed.
Z. D. Kovalyuk, O. I. Kushnir, O. M. Sidor, V. V. Netyaga   +3 more
doaj  

Gort Inse Guaire

, 1937
Supported by funding from the Department of Arts, Heritage and the Gaeltacht (Ireland), University College Dublin, and the National Folklore Foundation (Fondúireacht Bhéaloideas Éireann), 2014-2016.
Gort Inse Guaire, Éanacháin, P. Ó H
openaire   +1 more source

Calculation of the band structure and its parameters for 2D indium monoselenide

Хімія, фізика та технологія поверхні
InSe as a 2D structure possesses carrier mobility and adaptive band gap at the level of the best nanoelectronic materials. Structurally the crystal is layered — it contains monolayers, each consisting of four monoatomic sheets in the sequence Se-In-In ...
О.Я. Тузяк, В.І. Дзюба, П.В. Галій, Т.М. Ненчук   +3 more
doaj   +1 more source

Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe [PDF]

, 2012
n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured,
Sydor, O.M., Kovalyuk, Z.D., Duplavyy, V.Y.   +2 more
core  

Defect Engineering via Vacuum Annealing: Precise Selenium Vacancy Control for High‐Performance InSe Photodetectors

Advanced Electronic Materials
Few‐layer indium selenide (InSe) holds promise for next‐generation optoelectronics but suffers from defect‐related limitations. While thermal annealing is a common post‐synthesis technique for tuning the properties of 2D materials, its application in ...
Yi Liu, Xinlei Zhang, Wan Qu, Dan Zheng, Zhengyi Sun, Zhuochen Cai, Shixuan Guo, He Huang, Tao Wang, Qinghua Zhao   +9 more
doaj   +1 more source

Blogs, genes and immigration: Online media and minimal politics [PDF]

, 2012
Böhmig, Inse, Macgilchrist, Felicitas, Felicitas Macgilchrist, Inse Böhmig   +3 more
core   +1 more source

Heterojunction on the basis of FeIn₂Se₄ crystal obtained by the Bridgman method

Технологія та конструювання в електронній апаратурі, 2007
FeIn2Se4 crystals with a layered structure and magnetic component were grown by the Bridgman method. Heterojunctions of type n-InSe–p-FeIn₂Se₄ were fabricated.
Z. D. Kovalyuk, V. M. Katerynchuk, V. V. Netyaga, V. A. Zaslonkin   +3 more
doaj  

InSe

Yüksek ...
openaire   +1 more source