Results 101 to 110 of about 5,461 (227)
Transition Metal Dichalcogenide Multijunction Solar Cells Toward the Multicolor Limit
Solar RRL, Volume 10, Issue 13, 15 July 2026.A thermodynamic design framework reveals how transfer‐printable TMD multijunction solar cells approach the multicolor limit. Within the 1.0–2.1 eV TMD bandgap window, a five‐junction ladder nears the efficiency plateau, while radiative efficiency, luminescent coupling, excitonic absorption, and bottom‐cell stability set the practical headroom for van ...
Seungwoo Lee
wiley +1 more source
Optical Characterization of the Mgo/Inse Interface [PDF]
, 2015 Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166In this work, a 500nm thick MgO layer deposited on the physically evaporated amorphous InSe thin film substrate is designed as a window for the MgO/InSe terahertz resonators.
Elsayed, Khaled A. +4 more
core +1 more source
Chemie und Pharmazie in die Nachhaltigkeit einbetten
Angewandte Chemie, Volume 138, Issue 29, 13 July 2026.Chemie und Pharmazie sind mit ihren Produkten und Prozessen grundlegend für unseren hohen Lebensstandard. Es ist wesentlich, ihre Verbindung mit der Nachhaltigkeit zu verstehen, damit sie auf nachhaltige Weise nachhaltig zur Nachhaltigkeit beitragen können.
Klaus Kümmerer
wiley +1 more source
AIP Advances, 2017 We proposed a quantitative thermodynamic theory to address the physical process of surface roughening during the epitaxial growth of core-shell NW with alloy layer.
Yuanyuan Cao, Dongfeng Diao
doaj +1 more source
Influence of γ-radiation on electrical parameters InSe-heterostructures [PDF]
, 2005 Исследования гетероструктур p-n-InSe и окисел-p-InSe после облучения в дозах 10-300 Р показали, что InSe-диоды отвечают требованиям радиационной ...
Политанская, О.А. +3 more
core +2 more sources
Layered Indium Selenide under High Pressure: A Review
Crystals, 2018 This paper intends a short review of the research work done on the structural and electronic properties of layered Indium Selenide (InSe) and related III–VI semiconductors under high pressure conditions.
Alfredo Segura
doaj +1 more source
Електричні властивості та фотовідгук гетеропереходу NiFe2O4/InSe [PDF]
Досліджені умови нанесення методом спрей-піролізу при температурі 623 К тонких напівпровідникових феритових плівок n-NiFe2O4 на підкладки з кристалічного шаруватого напівпровідника nInSe для створення фоточутливих гетероперехолів n-NiFe2O4/n-InSe.
Orletskii, I.G. +5 more
core +1 more source
Electrical and topological properties of oxides films grown thermally on InSe substrates
Технологія та конструювання в електронній апаратурі, 2010 The surface resistance dynamics of oxides grown thermally on InSe substrates in two crystallography planes is obtained. It is determined that resistance changes considerably only during the first 5 minutes of the oxidization period.
В. М. Катеринчук +2 more
doaj
Ambipolar field-effect transistors by few-layer InSe with asymmetry contact metals
AIP Advances, 2017 Group IIIA−VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te) have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties.
Chang-Yu Lin +3 more
doaj +1 more source
Photoelectric parameters of SnS₂–ₓSeₓ–InSe heterojunctions (0 ≤ x ≤ 1)
Технологія та конструювання в електронній апаратурі, 2006 Heterojunctions SnS2–xSex–InSe were fabricated using the optical contact method of semiconductors. Their photoresponse spectrum narrows linearly with increasing x.
V. N. Katerinchuk, M. Z. Kovalyuk
doaj