Results 101 to 110 of about 5,450 (225)

Electrical and topological properties of oxides films grown thermally on InSe substrates

Технологія та конструювання в електронній апаратурі, 2010
The surface resistance dynamics of oxides grown thermally on InSe substrates in two crystallography planes is obtained. It is determined that resistance changes considerably only during the first 5 minutes of the oxidization period.
В. М. Катеринчук, З. Д. Ковалюк, В. В. Хомяк   +2 more
doaj  

Monolayer indium selenide: an indirect bandgap material exhibits efficient brightening of dark excitons

npj 2D Materials and Applications
Atomically thin indium selenide (InSe) exhibits a sombrero-like valence band, leading to distinctive excitonic behaviors. It is known that the indirect band gap of atomically thin InSe leads to a weak emission from the lowest-energy excitonic state (A ...
Naomi Tabudlong Paylaga, Chang-Ti Chou, Chia-Chun Lin, Takashi Taniguchi, Kenji Watanabe, Raman Sankar, Yang-hao Chan, Shao-Yu Chen, Wei-Hua Wang   +8 more
doaj   +1 more source

Structure and Physical Properties of In2Se3{Mn}, InSe{Mn} and InSe{Fe} Layered Crystals

, 2015
The influence of magnetic impurities on the properties of In2Se3 and InSе layered crystals was studied. The results indicate the formation of substitutional solid solutions in the In2Se3(1 wt. % Mn(, InSe(0.5 wt. % Mn( single crystals.
Ivanov, V. I., Z. D. Kovalyuk, Kovalyuk , Z. D., V. I. Ivanov, Kaminskii, V. M., V. V. Kaminskii   +5 more
core   +1 more source

The effect of γ-irradiation on parameters of localized states in p-InSe and n-InSe single crystals

, 2010
Установлено, что γ-облучение монокристаллов р-InSe и n-InSe (0,2 и 0,4 мол.% Sn) дозой Dγ = 100 крад приводит к существенному изменению параметров локализованных в запрещенной зоне состояний: к увеличению плотности локализованных вблизи уровня Ферми ...
Асадов, М.М., Мустафаева, С.Н., Исмайлов, А.А.   +2 more
core   +1 more source

Adsorption and Sensing Properties of Ni-Modified InSe Monolayer Towards Toxic Gases: A DFT Study

Chemosensors
The emission of toxic gases from industrial production has intensified issues related to atmospheric pollution and human health. Consequently, the effective real-time monitoring and removal of these harmful gases have emerged as significant challenges ...
Jianhong Dong, Xiaoqian Qiu, Shuying Huang, Shaomin Lin, Lisha Liu, Huihui Xiong   +5 more
doaj   +1 more source

Effective mass calculation for InSe, InSe : Hoo(0.0025), InSe : Ho-0.025, InSe : Ho-0.005 and InSe : Ho0.05 samples using the external electric field shifting

, 2004
Undoped InSe and Ho doped InSe single crystals were grown by Bridgman-Stockberger method. The InSe crystals both undoped and doped with different ratios of (InSe:Ho-0.0025, InSe:Ho-0.0125 and InSe:Ho-0.005 and InSe:Hoo.05) had, no cracks or voids on the ...
Ates, A
core  

Heterostructures obtained by annealing InSe single crystals in sulfur vapors

Технологія та конструювання в електронній апаратурі, 2009
It has been established that during prolonged (120 h) thermal treatment of InSe single crystals in sulfur vapors, an InS/InSe heterostructure is formed.
Z. D. Kovalyuk, O. I. Kushnir, O. M. Sidor, V. V. Netyaga   +3 more
doaj  

Nonlinear Optical Performance of Cdo/Inse Interfaces

, 2020
Qasrawi, Atef Fayez/0000-0001-8193-6975In this article, the growth nature, structural and optical properties of CdO/InSe interfaces are investigated. The CdO/InSe interfaces are prepared by the thermal vacuum deposition technique. Structurally, while the
Qasrawı, Atef Fayez Hasan, AlGarni, Sabah E., Qasrawi, A. F.   +2 more
core   +1 more source

InSe ince filmlerin ve InSe ince film aygıtların elde edilmesi ve incelenmesi

, 1998
TÜBİTAK TBAG28.02.1998Bu projenin öncelikli amacı vakumda cam tabanlar üzerine büyütülen InSe ince filmlerin elektrik, optik ve yapı özelliklerinin incelenerek depozisyon parametrelerinin ve filmlere uygulanan bazı film büyütme sonrası işlemlerin ...
Günal, İbrahim, Özkan, Hüsnü, Allakhverdıev, Kerim, Erçelebi, Ayşe Çiğdem, Gasanly, Nizami, Parlak, Mehmet   +5 more
core  

Properties of Se/Inse Thin-Film Interface

, 2016
Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166Se, InSe, and Se/InSe thin films have been prepared by the physical vapor deposition technique at pressure of similar to 10(-5) torr.
Elsayed, Khaled A., Qasrawı, Atef Fayez Hasan, Kayed, T. S., Kayed, Tarek Said, Qasrawi, A. F.   +4 more
core   +1 more source