Results 81 to 90 of about 5,461 (227)
The effect of γ-irradiation on parameters of localized states in p-InSe and n-InSe
, 2010 Установлено, что γ-облучение монокристаллов р-InSe и n-InSe (0,2 и 0,4 мол.% Sn) дозой Dγ = 100 крад приводит к существенному изменению параметров локализованных в запрещенной зоне состояний: к увеличению плотности локализованных вблизи уровня Ферми ...
Асадов, М.М. +2 more
core +3 more sources
Physics of Complex SystemsБинарные халькогенидные соединения нашли широкий спектр применения благодаря возможности быстрого и обратимого фазового перехода, перестраиваемой ширины запрещенной зоны, высокой подвижности носителей заряда.
Мария Евгеньевна Федянина +8 more
doaj +1 more source
Längerlebige Loch‐Qubits durch stärkere Spin‐Bahn‐Kopplung: Schneller treiben, länger leben
Physik in unserer Zeit, EarlyView.Halbleiter‐Spin‐Qubits in Quantenpunkten stehen vor dem vermeintlichen Dilemma, dass schnelle Spin‐Kontrolle durch stärkere Kopplung an das Umfeld nur auf Kosten der Kohärenz möglich ist. Da deren Eigenschaften empfindlich vom einbettenden elektrostatischen Potential abhängen, lässt sich dieser Gegensatz durch eine gezielte Feinabstimmung des ...
Miguel J. Carballido
wiley +1 more source
Effective mass calculation for InSe, InSe : Hoo(0.0025), InSe : Ho-0.025, InSe : Ho-0.005 and InSe : Ho0.05 samples using the external electric field shifting [PDF]
, 2004 Undoped InSe and Ho doped InSe single crystals were grown by Bridgman-Stockberger method. The InSe crystals both undoped and doped with different ratios of (InSe:Ho-0.0025, InSe:Ho-0.0125 and InSe:Ho-0.005 and InSe:Hoo.05) had, no cracks or voids on the ...
Ates, A
core
Mixed polytype/polymorph formation in InSe films grown by molecular beam epitaxy on GaAs(111)B
npj 2D Materials and ApplicationsWe report the growth of InSe films on semi-insulating GaAs(111)B substrates by molecular beam epitaxy (MBE). Excellent nucleation behavior resulted in the growth of smooth, single-phase InSe films.
Maria Hilse +9 more
doaj +1 more source
Structural Characterisation of Grown InSe:Mn Semiconductors and Effect of Doped Manganese
Journal of Anatolian Physics and AstronomyScientific studies on binary semiconductors have been going on for half a century. The growth and research of semiconductors have contributed greatly to the advancement of semiconductor technology.
Mehmet Kürşat Dumanli, Bekir Gürbulak
doaj +1 more source
Photonisch‐elektronische Analogrechentechnik: Photonen & Elektronen: ein Team für KI
Physik in unserer Zeit, EarlyView.Wir stellen die Architektur für einen analogen Prozessor für Künstliche Intelligenz (KI) vor. Er kombiniert die Vorteile elektronischer und optischer Informationsverarbeitung. Durch Verwendung hocheffizienter Galliumnitrid‐MikroLEDs arbeitet er dabei besonders energieeffizient.
Robert Kraneis +3 more
wiley +1 more source
Annealing effect on I-V characteristic of n-ZnO – p-InSe heterojunction
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2015 The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered compounds.
Z. D. Kovalyuk +5 more
doaj +1 more source
Sustainable Development, EarlyView.ABSTRACT Sustainable development transforms production systems, requiring integrated environmental, social, and economic strategies. Energy systems are key agro‐industrial supply chains in developing countries. Brazil's soybean supply chain impacts Gross Domestic Product, mainly through exports.
Aline Veronese da Silva +3 more
wiley +1 more source
Nonlinear Optical Performance of Cdo/Inse Interfaces [PDF]
, 2020 Qasrawi, Atef Fayez/0000-0001-8193-6975In this article, the growth nature, structural and optical properties of CdO/InSe interfaces are investigated. The CdO/InSe interfaces are prepared by the thermal vacuum deposition technique. Structurally, while the
Qasrawı, Atef Fayez Hasan +2 more
core +1 more source