Results 81 to 90 of about 7,711 (227)
Dielectric dispersion in InSe/CdS bilayers
Qasrawi, Atef Fayez/0000-0001-8193-6975In the current study, the effect of the amorphous InSe thin film substrate on the structural, optical and dielectric properties of CdS are investigated.
Qasrawı, Atef Fayez Hasan +2 more
core +1 more source
Orientation Engineering in Flexible Ag2Se‐Based Thermoelectric Films
We comprehensively review recent advances in highly oriented Ag2Se films. We propose two practical metrics to quantitatively benchmark their application potential and establish a unified framework that elucidates the orientation‐dependent charge transport mechanism in Ag2Se‐based films.
Hao Wu +3 more
wiley +1 more source
El Redactor del Inse / Año I / Edición No. 04 ¿/ 1976
11 páginas contiene ilustraciones y gráficosEsta edición contiene los siguientes títulos: Instituto Superior de Educación-INSE -- Nuestra Razón de Ser -- Forjadores de una Idea: INSE -- Concurso Logotipo-Bases -- El Despotismo de la Luis Ángel A.
INSE
core
UNELE PROPRIETĂŢI OPTICE ALE STRUCTURILOR InSe CU STRAT SUBŢIRE DE OXID DE BISMUT
In this work is investigated the light absorption in the InSe layer of the heterostructure as well as the InSe layer from the interface of the junction Bi2O3-InSe through the absorption, refl ection spectrums and photoluminescence at temperatures from ...
USM ADMIN
doaj
From interface construction to multifunctional energy applications, BPQD hybrid systems are systematically analyzed through a unified framework integrating interfacial engineering, structural stability, and energy functionality, offering design principles for next‐generation energy‐storage and energy‐conversion technologies.
Kamel A. Saleh +7 more
wiley +1 more source
El Redactor del Inse / Año II / Edición No. 08 /1977
16 páginas contiene ilustraciones y gráficosEsta edición contiene los siguientes títulos: "Últimos sucesos" Noticiero de televisión en el Inse -- Álvaro Salomón Becerra, No un tipo cualquiera, por Gabriela Camargo Vargas y Liduvina Carrascal Torrado ...
INSE
core
Carrier Mobility Enhancement in Two‐Dimensional Semiconductor
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo +6 more
wiley +1 more source
El Redactor del Inse / Año II / Edición No. 09 / 1977
16 páginas contiene ilustraciones y gráficosEsta edición contiene los siguientes títulos: Concurso periodístico del INSE -Directores de los diarios ''La Opinión'' y "La Patria", entregarán los premios -- Perfiles de un auténtico Universitario, por Astrid
INSE
core
Annealing effect on I-V characteristic of n-ZnO – p-InSe heterojunction
The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered compounds.
Z. D. Kovalyuk +5 more
doaj +1 more source
Traditional light‐analyzing tools, known as spectrometers, are typically too bulky and expensive to fit into portable electronics like smartphones or wearables. In this study, we developed a microscopic, high‐performance spectrometer using a material called Indium Selenide combined with smart algorithms to accurately analyze light from the visible to ...
Jing Chen +8 more
wiley +1 more source

