Results 161 to 170 of about 5,461 (227)
Progress in Strain Engineering of 2D-Integrated Heterostructures for Ultrasensitive Sensors. [PDF]
Ton TB +4 more
europepmc +1 more source
A machine-learning virtual source model for nanoscale transistors. [PDF]
Yang Q, Guo J.
europepmc +1 more source
Structural and Electronic Response of Multigap N-Doped In2Se3: A Prototypical Material for Broad Spectral Optical Devices. [PDF]
Rodrigues-Fontenele G +7 more
europepmc +1 more source
Growth and characterization of InSe/Ge/InSe interfaces [PDF]
Abstract In the current study, we report the effect of insertion of a 200 nm thick Ge film between two layers of InSe. The Ge sandwiched InSe films are studied by means of X-ray diffraction technique, energy dispersion X-ray spectroscopy attached to a scanning electron microscope, optical spectrophotometry and light power dependent photoconductivity.
S.E. Al Garni +2 more
openaire +2 more sources

