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Structural and Electronic Response of Multigap N-Doped In2Se3: A Prototypical Material for Broad Spectral Optical Devices. [PDF]

open access: yesACS Appl Mater Interfaces
Rodrigues-Fontenele G   +7 more
europepmc   +1 more source

Growth and characterization of InSe/Ge/InSe interfaces [PDF]

open access: yesOptik, 2017
Abstract In the current study, we report the effect of insertion of a 200 nm thick Ge film between two layers of InSe. The Ge sandwiched InSe films are studied by means of X-ray diffraction technique, energy dispersion X-ray spectroscopy attached to a scanning electron microscope, optical spectrophotometry and light power dependent photoconductivity.
S.E. Al Garni   +2 more
openaire   +2 more sources

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