Results 171 to 180 of about 5,450 (225)

Photoreflectance and Impedance Study of InSe and Modified InSe

Journal of The Electrochemical Society, 1990
Caracterisation d'un electrode de selleniure d'indium de type n modifiee ou non par un electrolyte de polyiodure de cuivre, par spectrometrie d'independance et de photoreflexion afin d'observer la reponse ...
Wu‐Mian Shen, Micha Tomkiewicz, D. Sedaries, C. Levy‐Clement   +3 more
openaire   +1 more source

The Spectroscopy of InSe Nanoparticles

The Journal of Physical Chemistry B, 2005
The synthesis of several different sizes of InSe nanoparticles from organometallic precursors is reported. These particles are characterized by transmission electron microscopy, electron diffraction, and optical spectroscopy. The electron diffraction results and optical properties indicate that these particles are two-dimensional disks, consisting of ...
Shuming, Yang, David F, Kelley
openaire   +2 more sources

Study of the heterointerfaces InSe on GaSe and GaSe on InSe

Applied Surface Science, 1993
Abstract InSe and GaSe thin films are grown on freshly cleaved (00.1) substrates of GaSe and InSe, respectively, by molecular beam epitaxy. They are studied in situ by X-ray photoelectron spectroscopy (XPS) and reflection high energy electron diffraction (RHEED).
D. Fargues, L. Brahim-Otsmane, M. Eddrief, C. Sébenne, M. Balkanski   +4 more
openaire   +1 more source

Impedance Spectroscopic Analysis of the InSe/ZnSe/InSe Interface

IEEE Transactions on Electron Devices, 2017
In this paper, n-InSe/p-ZnSe/n-InSe (npn) thin-film transistors (TFTs) are deposited onto cubic (111)-oriented Ag, Au, and Al thin-film substrates. The properties of the structures are explored by means of X-ray diffraction and impedance spectroscopy in the frequency range of 10–1800 MHz.
Sabah E. Al Garni, Atef F. Qasrawi
openaire   +1 more source

First-principles study of the electronic structure of γ-InSe and β-InSe

Physical Review B, 1993
The electronic band structure of the semiconducting \ensuremath{\beta} and \ensuremath{\gamma} polytypes of InSe is calculated from first principles, with spin-orbit effects included. The two polytypes differ by the lateral stacking arrangement of four-atomic-plane building blocks, composed of Se-In-In-Se planes. These building blocks are terminated by
, Gomes da Costa P, , Dandrea, , Wallis, , Balkanski   +3 more
openaire   +2 more sources

Thermal transport in monolayer InSe

Journal of Physics: Condensed Matter, 2017
Two-dimensional InSe, a recently synthesized semiconductor having a moderate band gap, has gained attention due to its ultra high mobility and high photo-responsivity. In this work, we calculate the lattice thermal conductivity (κ) of monolayer InSe by solving the phonon Boltzmann transport equation (BTE) with first-principles calculated inter atomic ...
Arun S, Nissimagoudar, Jinlong, Ma, Yani, Chen, Wu, Li   +3 more
openaire   +2 more sources

Photoconductivity of InSe Single Crystals

physica status solidi (a), 1982
Photoconductivity is studied in n-type InSe single crystals, grown from a non-stoichiometric melt by the Bridgman-Stockbarger method. The spectral response of photoconductivity, related to the near edge absorption spectrum, shows a well defined maximum corresponding to the excitonic region of absorption.
DE BLASI, Carmelo, MICOCCI, Gioacchino, RIZZO, Angelo, TEPORE, Antonio   +3 more
openaire   +2 more sources

Absorption and optical conduction in InSe/ZnSe/InSe thin film transistors

Functional Materials Letters, 2016
In this work, (n)InSe/(p)ZnSe and (n)InSe/(p)ZnSe/(n)InSe heterojunction thin film transistor (TFT) devices are produced by the thermal evaporation technique. They are characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion X-ray spectroscopy and optical spectroscopy techniques. While the InSe films are
S. E. Al Garni, A. F. Qasrawi
openaire   +1 more source

Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/p-InSe heterojunctions

Semiconductors, 2014
The effect of the low-temperature annealing of n- and p-type InSe single crystals on the photoelectric characteristics of n-InSe/p-InSe heterojunctions is investigated. It is found that the most pronounced enhancement of these characteristics takes place for annealing temperatures of 150–200°C.
V. A. Khandozhko, Z. R. Kudrynskyi, Z. D. Kovalyuk   +2 more
openaire   +1 more source

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2013
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  +6 more sources