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Absorption and optical conduction in InSe/ZnSe/InSe thin film transistors
Functional Materials Letters, 2016In this work, (n)InSe/(p)ZnSe and (n)InSe/(p)ZnSe/(n)InSe heterojunction thin film transistor (TFT) devices are produced by the thermal evaporation technique. They are characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion X-ray spectroscopy and optical spectroscopy techniques. While the InSe films are
S. E. Al Garni, A. F. Qasrawi
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Semiconductors, 2014
The effect of the low-temperature annealing of n- and p-type InSe single crystals on the photoelectric characteristics of n-InSe/p-InSe heterojunctions is investigated. It is found that the most pronounced enhancement of these characteristics takes place for annealing temperatures of 150–200°C.
V. A. Khandozhko +2 more
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The effect of the low-temperature annealing of n- and p-type InSe single crystals on the photoelectric characteristics of n-InSe/p-InSe heterojunctions is investigated. It is found that the most pronounced enhancement of these characteristics takes place for annealing temperatures of 150–200°C.
V. A. Khandozhko +2 more
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Heteroepitaxy of Layered Compound InSe and InSe/GaSe onto GaAs Substrates
Japanese Journal of Applied Physics, 1998The van der Waals epitaxy of InSe films was performed on (111)GaAs surface at the growth temperature of 350°C. A spiral trigonal structure was observed on the surface of the InSe films. To improve crystal quality of the InSe films, their orientation control was investigated.
Maman Budiman +2 more
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Inverse-photoemission spectroscopy of GaSe and InSe
Physical Review B, 1994The lamellar semiconductors GaSe and InSe have been studied with k-resolved inverse-photoemission spectroscopy along two major symmetry directions (Γ¯ K¯ and Γ¯ M¯) of the surface Brillouin zone. Three bands with well-resolved features are observed from which the dispersion of the conduction bands can be determined with good precision.
Sporken, Robert +5 more
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Crystallization of amorphous InSe matrix in PbTe–InSe multilayer nanocomposite structure
Journal of Materials Science: Materials in Electronics, 2017Present study reveals an impact of annealing on the crystallization of InSe matrix in PbTe–InSe multilayer nanocomposite structures prepared using thermal evaporation technique. Cross sectional transmission electron microscopic image clearly shows that the PbTe nanocrystals (NCs) are embedded in InSe matrix layer.
M. Manonmani Parvathi +3 more
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2014
???????????????? ?????????????????????? ???????????????????????? ?????????????????????????? ?????????????????????????????? n-p-n-???????? ???? ???????????? ???????????????????????? ?????????????? ?????????????????????????????? "????????????-InSe-????????????".
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???????????????? ?????????????????????? ???????????????????????? ?????????????????????????? ?????????????????????????????? n-p-n-???????? ???? ???????????? ???????????????????????? ?????????????? ?????????????????????????????? "????????????-InSe-????????????".
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Intrinsic photoconductivity of InSe
Inorganic Materials, 2010The intrinsic photoconductivity of InSe layered crystals has been measured. The behavior of the photoconductivity at high photon energies can be accounted for by the influence of hyperbolic excitons generated by the laser light.
A. G. Kyazym-zade +3 more
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2017
??????????????????????, ?????? ??-?????????????????? ???????????????????????????? ??-InSe ?? n-InSe (0,2 ?? 0,4 ??????.% Sn) ?????????? D?? = 100 ???????? ???????????????? ?? ?????????????????????????? ?????????????????? ???????????????????? ???????????????????????????? ?? ?????????????????????? ???????? ??????????????????: ?? ???????????????????? ?????
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??????????????????????, ?????? ??-?????????????????? ???????????????????????????? ??-InSe ?? n-InSe (0,2 ?? 0,4 ??????.% Sn) ?????????? D?? = 100 ???????? ???????????????? ?? ?????????????????????????? ?????????????????? ???????????????????? ???????????????????????????? ?? ?????????????????????? ???????? ??????????????????: ?? ???????????????????? ?????
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