Results 181 to 190 of about 5,461 (227)
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Absorption and optical conduction in InSe/ZnSe/InSe thin film transistors

Functional Materials Letters, 2016
In this work, (n)InSe/(p)ZnSe and (n)InSe/(p)ZnSe/(n)InSe heterojunction thin film transistor (TFT) devices are produced by the thermal evaporation technique. They are characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion X-ray spectroscopy and optical spectroscopy techniques. While the InSe films are
S. E. Al Garni, A. F. Qasrawi
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Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/p-InSe heterojunctions

Semiconductors, 2014
The effect of the low-temperature annealing of n- and p-type InSe single crystals on the photoelectric characteristics of n-InSe/p-InSe heterojunctions is investigated. It is found that the most pronounced enhancement of these characteristics takes place for annealing temperatures of 150–200°C.
V. A. Khandozhko   +2 more
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Heteroepitaxy of Layered Compound InSe and InSe/GaSe onto GaAs Substrates

Japanese Journal of Applied Physics, 1998
The van der Waals epitaxy of InSe films was performed on (111)GaAs surface at the growth temperature of 350°C. A spiral trigonal structure was observed on the surface of the InSe films. To improve crystal quality of the InSe films, their orientation control was investigated.
Maman Budiman   +2 more
openaire   +1 more source

Inverse-photoemission spectroscopy of GaSe and InSe

Physical Review B, 1994
The lamellar semiconductors GaSe and InSe have been studied with k-resolved inverse-photoemission spectroscopy along two major symmetry directions (Γ¯ K¯ and Γ¯ M¯) of the surface Brillouin zone. Three bands with well-resolved features are observed from which the dispersion of the conduction bands can be determined with good precision.
Sporken, Robert   +5 more
openaire   +3 more sources

Crystallization of amorphous InSe matrix in PbTe–InSe multilayer nanocomposite structure

Journal of Materials Science: Materials in Electronics, 2017
Present study reveals an impact of annealing on the crystallization of InSe matrix in PbTe–InSe multilayer nanocomposite structures prepared using thermal evaporation technique. Cross sectional transmission electron microscopic image clearly shows that the PbTe nanocrystals (NCs) are embedded in InSe matrix layer.
M. Manonmani Parvathi   +3 more
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[Inseli Ostseite]

1906
[Robert Breitinger]
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???????????????????????? ?????????????????????????????????? ?????????????? ???????????????????????? ?????????????????????????????? "????????????-InSe-????????????"

2014
???????????????? ?????????????????????? ???????????????????????? ?????????????????????????? ?????????????????????????????? n-p-n-???????? ???? ???????????? ???????????????????????? ?????????????? ?????????????????????????????? "????????????-InSe-????????????".
openaire   +3 more sources

Intrinsic photoconductivity of InSe

Inorganic Materials, 2010
The intrinsic photoconductivity of InSe layered crystals has been measured. The behavior of the photoconductivity at high photon energies can be accounted for by the influence of hyperbolic excitons generated by the laser light.
A. G. Kyazym-zade   +3 more
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?????????????? ??-?????????????????? ???? ?????????????????? ???????????????????????????? ?????????????????? ?? ???????????????????????????? p-InSe ?? n-InSe

2017
??????????????????????, ?????? ??-?????????????????? ???????????????????????????? ??-InSe ?? n-InSe (0,2 ?? 0,4 ??????.% Sn) ?????????? D?? = 100 ???????? ???????????????? ?? ?????????????????????????? ?????????????????? ???????????????????? ???????????????????????????? ?? ?????????????????????? ???????? ??????????????????: ?? ???????????????????? ?????
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