Results 191 to 200 of about 2,204 (218)
Some of the next articles are maybe not open access.
Computer Aided Optimization of Insulated Gate Bipolar Transistors
ECS Meeting AbstractsCompared to other types of transistors, insulating gate bipolar transistors (IGBTs) have high on-state current and breakdown voltage, which make them ideal for low-frequency (<20 kHz) power applications, such as switching devices for motor drive systems and uninterruptible power supplies.
Pranathi Brungi, Petru Andrei
openaire +1 more source
Lateral Unidirectional Bipolar-Type Insulated-Gate Transistors
Japanese Journal of Applied Physics, 1983A lateral unidirectional bipolar-type insulated-gate transistor (Lubistor) is proposed which has a lateral p +-n-n + (or n +-p-p +) diode structure on the top of the insulator and in which the insulated gate is aligned in the n (or p) region and the thickness of the n (or p ...
openaire +1 more source
An analytical model for the vertical insulated gate bipolar transistor
1989An analytical steady-state model has been developed for the vertical IGBT. Effects like conductivity modulation, collector bias variations, emitter injection efficiency, recombination and channel conductance are included. Simulated results are in good agreement with measured characteristics for a 1000V IGBT device.
Grahn Kaj, Eränen Simo
openaire +2 more sources
New Lateral Insulated-Gate Bipolar Transistor on Silicon-on-Insulator
Journal of the Korean Physical Society, 2002Choi Woo-Beom +4 more
openaire +1 more source
Series connection of insulated gate bipolar transistors (IGBTs)
2005 European Conference on Power Electronics and Applications, 2005R. Withanage, N. Shammas, S. Tennakoon
openaire +1 more source
High Power Insulated Gate Bipolar Transistors (IGBTs)
Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988H. Ohashi, A. Nakagawa, M. Hideshima
openaire +1 more source