Results 181 to 190 of about 2,204 (218)

Effects of gamma irradiation on the insulated-gate bipolar transistor

Microelectronics Reliability, 1996
Abstract The effects of gamma irradiation on the International Rectifier IRGBC20 insulated-gate bipolar transistor (IGBT) was investigated. These devices were found to be sensitive to gamma irradiation due to their metal-oxide-semiconductor field-effect-transistor (MOSFET) input drive.
Z.H. Tong, S.S. Ang, W.D. Brown
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Analysis of double trench insulated gate bipolar transistor

Solid-State Electronics, 1995
Abstract Numerical simulation is used to analyse a novel Double Trench Insulated Gate Bipolar Transistor (DT-IGBT) structure. It has been found that the DT-IGBT structure can be used to achieve a switching loss similar to that of the power MOSFET transistors.
Q. Huang, G.A.J. Amaratunga
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The Trench Planar Insulated Gate Bipolar Transistor (TPIGBT)

IEE Colloquium Recent Advances in Power Devices, 1999
A new type of IGBT structure, with a trench gate placed in the middle of the JFET region, has been proposed. The device, called the trench-planar IGBT (TPIGBT) has been analysed in detail in terms of its on-state performance and resistive turn-off, and compared to a reference 2 kV planar, fine-lithography IGBT.
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An insightful analysis of the hybrid insulated-gate bipolar transistor

IEEE Transactions on Electron Devices, 1988
The shorted-anode or hybrid insulated-gate bipolar transistor (HIGBT) is examined theoretically (using a first-order analysis) and experimentally (using specially designed test structures) to give physical insight regarding the unique electrical properties of this power switching device.
J.G. Fossum, R.J. McDonald
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Series Connection of Insulated Gate Bipolar Transistors (IGBTs)

IEEE Transactions on Power Electronics, 2012
High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits.
Ruchira Withanage, Noel Shammas
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Adjustable high-speed insulated gate bipolar transistor

IEEE Transactions on Plasma Science, 2006
A new adjustable insulated gate bipolar transistor (IGBT) with Si/SiGe heterojunction collector structures is proposed to improve the operation speed and decrease the turnoff power loss by suppressing the tail-current. SiGe collector provides low contact resistance without consequently sacrificing turnoff losses, and also acts to suppress hole ...
null Fei Zhang, null Lina Shi, null Chengfang Li, null Liang Zhang, null Wei Wang, null Wen Yu, null Xiaowei Sun   +6 more
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Real Time Simulation of Insulated Gate Bipolar Transistor

Applied Mechanics and Materials, 2013
The voltage spike, current spike and power loss in switching process is important factors in reliability of insulated gate bipolar transistor (IGBT). The real time simulation of IGBT is studied in this paper, taking the basic cell of IGBT power electronic circuit as an example.
Xiao Jun Ma, Zong Min Yang, Chun Guang Liu, Yu Lin Yan   +3 more
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An efficient gate driver for high-power insulated gate bipolar transistors

Proceedings of 1994 IEEE Industry Applications Society Annual Meeting, 2002
This paper presents a novel FET/IGBT gate drive circuit for high power applications. Full galvanic isolation is provided, no floating power supplies are needed and continuous (DC) gate drive is possible. The circuit topology consists in essence of an inverter coupled to a synchronous rectifier.
M.J. Case, J.J. Schoeman, G. Blajszczak, J.D. van Wyk   +3 more
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A fully integrable insulated gate bipolar transistor with a trench gate structure

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002
A novel, fully integrable insulated gate bipolar transistor (IGBT) with a trench gate structure, called the 3D IGBT, is described. The 3D IGBT uses selective epitaxial silicon to form a top-contacted anode and still retain the cellular structure of vertically oriented devices.
P.V. Gilbert, G.W. Neudeck, R. Bashir, J. Siekkinen, J. Denton   +4 more
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Insulated gate bipolar transistor with trench gate structure of accumulation channel

Journal of Semiconductors, 2010
An accumulation channel trench gate insulated gate bipolar transistor (ACT-IGBT) is proposed. The simulation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2.
Qian Mengliang, Li Zehong, Zhang Bo, Li Zhaoji   +3 more
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